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Full-Text Articles in Engineering
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Single-Ended-To-Differential And Differential-To-Differential Channel-Select Filters Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of single-ended-to-differential and differential-to-differential (S2D and D2D) channel-select filters based on single-layer (SL) and dual-layer-stacked (DLS) AlN contour-mode MEMS resonators. The key filter performances in terms of insertion loss (as low as 1.4 dB), operating frequency (250-1280 MHz), and out-of-band rejection (up to 60 dB) constitute a significant advancement over all other state-of-the-art RF MEMS technologies. The fabrication process, namely stacking of two piezoelectric AlN layers (600 nm each) and three Pt electrode layers (100 nm each), is fully compatible with the previously demonstrated AlN RF MEMS switch process (also post-CMOS compatible), which …
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Very High Frequency Channel-Select Mems Filters Based On Self-Coupled Piezoelectric Aln Contour-Mode Resonators, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports experimental results on single-chip multi-frequency channel-select filters based on self-coupled piezoelectric aluminum nitride (AlN) contour-mode microelectromechanical (MEMS) resonators. Two-port AlN contour-mode resonators are connected in series and electrically coupled using their intrinsic capacitance to realize multi-frequency (94–271 MHz), narrow bandwidth (~0.2%), low insertion loss (~2.3 dB), high off-band rejection (~60 dB) and high linearity (IIP3 ~100 dBmV) channel-select filters on the same chip. This technology enables multi-frequency, high-performance and small-form-factor filter arrays and makes a single-chip multi-band reconfigurable radio frequency (RF) solution possible in the near future.
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Novel Electrode Configurations In Dual-Layer Stacked And Switchable Aln Contour-Mode Resonators For Low Impedance Filter Termination And Reduced Insertion Loss, Chengjie Zuo, Nipun Sinha, Gianluca Piazza
Chengjie Zuo
This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Chengjie Zuo
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super-high-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5%. These devices are employed to synthesize …