Engineering Commons^™

In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter extraction are simple I-V static characteristics and

C-V characteristics. A detailed parameter extraction procedure is presented. Furthermore, a double-pulse test-bench is built to characterize the resistive and inductive switching behavior of the GaN device. A simulation model is …

In this paper, the static and switching characterizations of a SiC MOSFET’s body diode are presented. The static characterization of SiC MOSFET’s body diode is carried out using a curve tracer and a double pulse test bench is

built to characterize the inductive switching behavior of SiC MOSFET’s body diode. The reverse recovery of SiC MOSFET’s body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET’s body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET’s body diode. …