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Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …