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Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun
Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun
Nian X. Sun
CoFe/PtMn/CoFe films were deposited on seed layers of Ru or NiFeCr with CoFe film compositions being either Co-10 at. %Fe or Co-16 at. %Fe. Eight periods of the CoFe/PtMn/CoFe trilayers were also prepared. The magnetic properties and ferromagnetic resonance (FMR) of these films were characterized with vibrating-sample magnetometer, and field-sweep FMR system at X band (∽9.5 GHz). The Ru-seeded CoFe/PtMn/CoFe sandwich films show excellent magnetic softness with a low hard axis coercivity of 2-4 Oe, an easy axis Mr/Ms of >98%, and a significantly enhanced in-plane anisotropy of 57-123 Oe when CoFe layer thickness is above 200 …
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …