Engineering Commons^™

Wide bandgap power devices have emerged as an often superior alternative power switch technology for many

power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models

of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit level simulators, are reviewed. …

In this paper, a simple and accurate circuit-simulator compact model for gallium nitride (GaN) high electron mobility transistor is proposed and validated under both static and switching conditions. A novel feature of this model is that it is valid also in the third quadrant, which is important when the device operates as a freewheeling diode. The only measurements required for the parameter extraction are simple I-V static characteristics and

C-V characteristics. A detailed parameter extraction procedure is presented. Furthermore, a double-pulse test-bench is built to characterize the resistive and inductive switching behavior of the GaN device. A simulation model is …

In this paper, the static and switching characterizations of a SiC MOSFET’s body diode are presented. The static characterization of SiC MOSFET’s body diode is carried out using a curve tracer and a double pulse test bench is

built to characterize the inductive switching behavior of SiC MOSFET’s body diode. The reverse recovery of SiC MOSFET’s body diode is shown at different forward conduction currents, junction temperatures and current commutation slopes. In order to evaluate the performance of SiC MOSFET’s body diode in different applications, an accurate physics-based diode model is introduced to perform simulations of SiC MOSFET’s body diode. …

The CREE 1200V/50A, 25mΩ 6-Pack SiC MOSFET module (CCS050M12CM2) is decomposed into a full 3D CAD model, and materials identified, for use in electrical circuit and multi-physics simulations. A reverse engineering technique is first developed, outlined, and then demonstrated on the CREE module. The ANSYS Q3D Extractor is applied to the 3D CAD model where electrical, lumped parameter, parasitic circuit elements are determined. The model is also analyzed with a multi-physics simulator to provide in-situ thermal maps of the baseplate surface for application scenarios, e.g. with a thermal interface material and pin fin heat sink to capture the thermal spreading …