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Reflection Anistropy Spectroscopy Study Of The Near Surface Electric Field In Low-Temperature Grown Gaas (001), Todd Holden, Fred H. Pollak, J. L. Freeouf, D. Mcinturff, J. L. Gray, Mark S. Lundstrom, J. M. Woodall
Reflection Anistropy Spectroscopy Study Of The Near Surface Electric Field In Low-Temperature Grown Gaas (001), Todd Holden, Fred H. Pollak, J. L. Freeouf, D. Mcinturff, J. L. Gray, Mark S. Lundstrom, J. M. Woodall
Department of Electrical and Computer Engineering Faculty Publications
We have evaluated an ‘‘effective depletion width’’ of =< 45 Å and the sign (n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs ~001! using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E1 , E1 + Delta1 optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs.
Electrical Characteristics Of Nearly Relaxed Inas/Gap Heterojunctions, E H. Chen, T. P. Chin, J. M. Woodall, Mark S. Lundstrom
Electrical Characteristics Of Nearly Relaxed Inas/Gap Heterojunctions, E H. Chen, T. P. Chin, J. M. Woodall, Mark S. Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward currentvaried exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights.
Technique For Measurement Of The Minority Carrier Mobility With A Bipolar Junction Transistor, S. L. D'Souza, Michael R. Melloch, Mark S. Lundstrom, E. S. Harmon
Technique For Measurement Of The Minority Carrier Mobility With A Bipolar Junction Transistor, S. L. D'Souza, Michael R. Melloch, Mark S. Lundstrom, E. S. Harmon
Department of Electrical and Computer Engineering Faculty Publications
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is demonstrated. By fixing the base-emitter voltage, the carrier injection into the base is constant. The collector current is then monitored as a function of a magnetic field applied perpendicular to the current transport across the base. The magnetic field leads to an increase in base transit time and a corresponding decrease in collector current. From the resulting fractional change in collector current, the minority carrier mobility in the base can be determined. For narrow base transistors, quasiballistic transport across the base must be taken into …