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Integrated Dc-Dc Boost Converters Using Cmos Silicon On Sapphire Technology, Imaduddin Mohammad

Open Access Theses

With the recent advancements in semiconductor manufacturing towards smaller, faster and more efficient microelectronic systems, the problems of increasing leakage current and reduced breakdown voltage in bulk-CMOS transistors have become substantial in the sub-100-nanometer era. The Peregrine UltraCMOS Silicon-on-Sapphire (SOS) technology that uses highly-insulating sapphire substrate as insulator was introduced to meet the continually growing need for higher performance RF products. The electrically isolated circuit elements in the UltraCMOS technology lead to increased switching speeds and lower power consumption due to reduced junction and parasitic capacitances. Furthermore, the growing need for high-speed switching applications such as boosting a lower voltage …