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Electrical and Computer Engineering
Missouri University of Science and Technology
Electrical engineering -- Materials -- Effect of radiation on<br />Semiconductors<br />Transistors
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Radiation And Annealing Characteristics In Neutron Bombarded Transistors Operated In The Inverse Configuration, Lo-Soun Su
Masters Theses
"When operating a silicon planar epitaxial transistor in the inverse configuration (i.e., with the emitter functioning as a collector and the collector functioning an emitter) the bulk space-charge volume of the new "emitter-base" junction is increased by a factor of 26.5 times that of the normal emitter-base junction. The carrier concentration in the new "emitter" is decreased by five orders of magnitude from that of the normal emitter, thus making it easier to investigate the effects of neutron radiation on the space-charge region and at the surface. Experiments using biasing of the new "emitter-base" junction during neutron radiation to change …