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Influence Of Reactive Atmosphere On Properties Of Cobalt Ferrite Thin Films Prepared Using Pulsed-Laser Deposition, A. Raghunathan, David C. Jiles, J. E. Snyder
Influence Of Reactive Atmosphere On Properties Of Cobalt Ferrite Thin Films Prepared Using Pulsed-Laser Deposition, A. Raghunathan, David C. Jiles, J. E. Snyder
David C. Jiles
A series of cobaltferrite (CFO) thin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition (PLD) at substrate temperature (T DEP) of 250 °C and oxygen pressures (P O2) from 0.67 to 6.7 Pa. The influence of PO2 on crystal structure, phase mixture, deposition rate, and magnetic properties was investigated. It is shown in this study that there is a window of PO2 for optimized growth of nanograined CFO films at low T DEP and that either higher or lower values of PO2 produce undesirable multiphase mixtures. CFO filmsgrown at such low substrate temperature and optimized oxygen pressure on thermal …
Growth Of Crystalline Cobalt Ferrite Thin Films At Lower Temperatures Using Pulsed-Laser Deposition Technique, A. Raghunathan, David C. Jiles, Ikenna C. Nlebedim
Growth Of Crystalline Cobalt Ferrite Thin Films At Lower Temperatures Using Pulsed-Laser Deposition Technique, A. Raghunathan, David C. Jiles, Ikenna C. Nlebedim
David C. Jiles
Cobaltferritethin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600 °C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobaltferritefilms, due to the large magnetoelastic coupling of cobaltferrite. It was shown in this study, that polycrystalline films with (111)-preferred orientation could be prepared at substrate temperatures as low as 250 °C. The growth of crystalline cobaltferritefilms at such low temperatures indicates the potential to use cobaltferrite for microelectromechanical systemsdevices and sensor applications including integration with a wider range of …