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Full-Text Articles in Engineering
Effect Of Temperature Variation On The Magnetostrictive Properties Of Coalxfe2−Xo4, Ikenna C. Nlebedim, N. Ranvah, Y. Melikhov, P. I. Williams, J. E. Snyder, A. J. Moses, David C. Jiles
Effect Of Temperature Variation On The Magnetostrictive Properties Of Coalxfe2−Xo4, Ikenna C. Nlebedim, N. Ranvah, Y. Melikhov, P. I. Williams, J. E. Snyder, A. J. Moses, David C. Jiles
David C. Jiles
The effect of temperature variation on the magnetoelasticproperties of the CoAlxFe2−xO4 system (for x=0.0, 0.2, 05, and 0.7) has been studied. Substitution of Al3+ for Fe3+ was found to lower the Curie temperature of the samples and to change the lattice parameter. The magnitude of peak to peak magnetostriction, strain sensitivity, magnetomechanical hysteresis, and relative contributions of λ111 and λ100 to the resultant magnetostriction were found to vary with temperature. The results show the possibility of tailoring the magnetoelasticproperties of highly magnetostrictive cobalt ferrite at temperatures of interest by cation substitution.
Growth Of Crystalline Cobalt Ferrite Thin Films At Lower Temperatures Using Pulsed-Laser Deposition Technique, A. Raghunathan, David C. Jiles, Ikenna C. Nlebedim
Growth Of Crystalline Cobalt Ferrite Thin Films At Lower Temperatures Using Pulsed-Laser Deposition Technique, A. Raghunathan, David C. Jiles, Ikenna C. Nlebedim
David C. Jiles
Cobaltferritethin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600 °C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobaltferritefilms, due to the large magnetoelastic coupling of cobaltferrite. It was shown in this study, that polycrystalline films with (111)-preferred orientation could be prepared at substrate temperatures as low as 250 °C. The growth of crystalline cobaltferritefilms at such low temperatures indicates the potential to use cobaltferrite for microelectromechanical systemsdevices and sensor applications including integration with a wider range of …
Resistivity Recovery In Gd5si2.09ge1.91 By Annealing, Ravi L. Hadimani, David C. Jiles
Resistivity Recovery In Gd5si2.09ge1.91 By Annealing, Ravi L. Hadimani, David C. Jiles
David C. Jiles
Irreversible change in resistivity occurs in Gd5(SixGe1−x)4 (with 0.41