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Silicon Based Schottky Diodes And Mos Capacitors For Sensing Singly And Multiply Charged Ions With Low Kinetic Energy, Daniel Blaine Cutshall Iii

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This study provides the foundation for the development of radiation detection technology of slow ions by investigating the fundamental interactions of slow ion beams with electronic devices. Silicon samples with a 50 nm oxide layer were irradiated with 1 keV Ar^Q+ beams (Q = 4, 8, and 11) at normal incidence in order to investigate the relatively unexplored effects of slow highly charged ions (HCIs) on electronic devices. After irradiation, an array of metal contacts was deposited onto the oxidized silicon samples to create metal oxide semiconductor (MOS) capacitors, which were then characterized using high frequency capacitance-voltage (C-V) measurements. …