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Band Discontinuity Measurements Of The Wafer Bonded Ingaas/Si Heterojunction, Aaron R. Hawkins, Kyle S. Mckay, Felix P. Lu, Jungsang Kim, Changhyun Yi, April S. Brown
Band Discontinuity Measurements Of The Wafer Bonded Ingaas/Si Heterojunction, Aaron R. Hawkins, Kyle S. Mckay, Felix P. Lu, Jungsang Kim, Changhyun Yi, April S. Brown
Faculty Publications
p-type InGaAs/Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs/Si interface were determined to be 0.48 and 0.1 eV, respectively, indicating a type-II band alignment.