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Full-Text Articles in Engineering
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Temperature Dependence Of Current Conduction In Semi-Insulating 4h-Sic Epitaxial Layer, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Characterization Of Deep Levels In N-Type And Semi-Insulating 4h-Sic Epitaxial Layers By Thermally Stimulated Current Spectroscopy, P. G. Muzykov, Ramesh Madhu Krishna, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Grigory Simin
We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Grigory Simin
We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …
Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Grigory Simin
Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.