Open Access. Powered by Scholars. Published by Universities.®
- Publication
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …
Epitaxial Growth Of M-Type Ba-Hexaferrite Films On Mgo (111) || Sic (0001) With Low Ferromagnetic Resonance Linewidths, Zhaohui Chen, Aria Fan Yang, Anton Geiler, Vincent Girard Harris (1962-), C. Vittoria, Paul R. Ohodnicki, K. Y. Goh, Michael E. Mchenry, Zhuhua Cai, Trevor L. Goodrich, Katherine S. Ziemer
Epitaxial Growth Of M-Type Ba-Hexaferrite Films On Mgo (111) || Sic (0001) With Low Ferromagnetic Resonance Linewidths, Zhaohui Chen, Aria Fan Yang, Anton Geiler, Vincent Girard Harris (1962-), C. Vittoria, Paul R. Ohodnicki, K. Y. Goh, Michael E. Mchenry, Zhuhua Cai, Trevor L. Goodrich, Katherine S. Ziemer
Anton Geiler
Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe₁₂O₁₉ target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4πs) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for …