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Electrical and Computer Engineering

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Selected Works

Nian X. Sun

Thin films

Publication Year

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun Aug 2013

Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun

Nian X. Sun

Single crystal Fe films were grown on Ge (001) substrates by using dc magnetron sputtering. It was found that the microstructures and magnetic properties of Fe films on Ge substrates were strongly dependent upon the substrate temperature during the deposition process. There existed a narrow substrate temperature window of 125 ± 25°C for achieving single crystal Fe film on Ge. Lower substrate temperature led to polycrystalline Fe films due to limited mobility of Fe atoms, while higher substrate temperatures resulted in amorphous Fe-Ge alloy due to severe interdiffusion.


Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris Apr 2012

Effects Of Boron Addition To The Atomic Structure And Soft Magnetic Properties Of Fecob Films, Aria Yang, Hassan Imrane, Jing Lou, Johnny Kirkland, Carmine Vittoria, Nian Sun, Vincent G. Harris

Nian X. Sun

The magnetic, microwave, and the atomic structure properties of (Fe₀.₇Co₀.₃)1-xBx sputtered films on glass substrates were investigated. The addition of boron induced a decrease in coercivity and ferromagnetic resonance linewidth. The amorphous structure was formed at x ∽0.075. Extended x-ray absorption fine structure (EXAFS) of Fe and Co showed the reduced Fourier transform (FT) amplitude, and increased Debye-Waller factors as x was increased, indicating the increased disorder due to the thermal and structural displacements. Possible Fe-B bonding was observed with a reduced bond length, which indicates boron atoms' preference for staying in the interstitial sites in bcc unit cell.