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Modeling Of Wide-Bandgap Power Semiconductor Devices—Part Ii, Kang Peng
Modeling Of Wide-Bandgap Power Semiconductor Devices—Part Ii, Kang Peng
Kang Peng
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and
system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.