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A Novel Wide-Band-Gap Semiconductor Based Microelectronic Gas Sensor, David V. Kerns, W P. Kang, J L. Davidson, B Henderson, Y Gurbuz
A Novel Wide-Band-Gap Semiconductor Based Microelectronic Gas Sensor, David V. Kerns, W P. Kang, J L. Davidson, B Henderson, Y Gurbuz
David V. Kerns
Summary form only given. A wide-band-gap semiconductor, high temperature tolerant microelectronic gas sensor of diamond has been developed for oxygen, hydrogen and CO gas detection. This new device has been fabricated in the form of catalyst-adsorptive oxide(Pt-SnOx )/i(intrinsic)-diamond/p+(doped)diamond, representing a CAIS device structure. The key elements in this structure are SnOx as a gas sensitive layer and PECVD (plasma enhanced chemical vapor deposited) diamond for high temperature operations. The major advantages of using diamond based structures with SnOx for gas sensing are higher operating temperature range, higher gas sensitivity and selectivity, reliable sensing performance in harsh environments, simplicity in fabrication …