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- Ferromagnetic resonance (2)
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Articles 1 - 4 of 4
Full-Text Articles in Engineering
Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun
Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun
Nian X. Sun
CoFe/PtMn/CoFe films were deposited on seed layers of Ru or NiFeCr with CoFe film compositions being either Co-10 at. %Fe or Co-16 at. %Fe. Eight periods of the CoFe/PtMn/CoFe trilayers were also prepared. The magnetic properties and ferromagnetic resonance (FMR) of these films were characterized with vibrating-sample magnetometer, and field-sweep FMR system at X band (∽9.5 GHz). The Ru-seeded CoFe/PtMn/CoFe sandwich films show excellent magnetic softness with a low hard axis coercivity of 2-4 Oe, an easy axis Mr/Ms of >98%, and a significantly enhanced in-plane anisotropy of 57-123 Oe when CoFe layer thickness is above 200 …
Structural And Magnetic Properties Of Ball-Milled Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu Powders, Ashish Baraskar, Yajie Chen, Soack Yoon, C. Chinnasamy, Nian Sun, Carmine Vittoria, Vincent Harris, Todd Heil, Matthew Willard
Structural And Magnetic Properties Of Ball-Milled Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu Powders, Ashish Baraskar, Yajie Chen, Soack Yoon, C. Chinnasamy, Nian Sun, Carmine Vittoria, Vincent Harris, Todd Heil, Matthew Willard
Nian X. Sun
Thick films of the Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu composition were synthesized via screen printing of the ball-milled ribbons of the above composition for possible use as planar inductors. The ribbons were obtained by rapid solidification. The resulting ribbon samples were annealed at 300 degrees C for 2 h to cause embrittlement. They were found to have soft magnetic properties (4πMs∽13 kG,ΔH ∽100 Oe, and Hc< 0.5 Oe). The brittle ribbons were ball milled using tungsten carbide vials and stainless steel balls in an inert atmosphere for various milling times. The sample milled for 10 h was found to have a 4πMs of about …
Electrical Tuning Of Magnetism In Fe₃O₄/Pzn–Pt Multiferroic Heterostructures Derived By Reactive Magnetron Sputtering, Ming Liu, Ogheneyunume Obi, Zhuhua Cai, Jing Lou, Guomin Yang, Katherine Ziemer, Nian Sun
Electrical Tuning Of Magnetism In Fe₃O₄/Pzn–Pt Multiferroic Heterostructures Derived By Reactive Magnetron Sputtering, Ming Liu, Ogheneyunume Obi, Zhuhua Cai, Jing Lou, Guomin Yang, Katherine Ziemer, Nian Sun
Nian X. Sun
Strong magnetoelectric (ME) coupling was demonstrated in Fe₃O₄/PZN–PT (lead zinc niobate–lead titanate) multiferroic heterostructures obtained through a sputter deposition process. The dependence of the magnetic anisotropy on the electric field (E-field) is theoretically predicted and experimentally observed by ferromagnetic resonance spectroscopy. A large tunable in-plane magnetic anisotropy of up to 600 Oe, and tunable out-of-plane anisotropy of up to 400 Oe were observed in the Fe₃O₄/PZN–PT multiferroic heterostructures, corresponding to a large ME coefficient of 100 Oe cm/kV in plane and 68 Oe cm/kV out of plane, which match well with predicted results. In addition, the electric field manipulation of …
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Ba-Hexaferrite Films For Next Generation Microwave Devices, Vincent Harris (1962-), Zhaohui Chen, Yajie Chen, Soack Yoon, Tomokuza Sakai, Anton Geiler, Aria Yang, Yongxue He, Katherine Ziemer, Nian Sun, C. Vittoria
Nian X. Sun
Next generation magnetic microwave devices require ferrite films to be thick (>300 μm), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing.