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Plasma Source Ion Implantation Of High Voltage Electrodes, Thomas Joseph Venhaus
Plasma Source Ion Implantation Of High Voltage Electrodes, Thomas Joseph Venhaus
Dissertations, Theses, and Masters Projects
Field emission and breakdown characteristics of high voltage, large area electrodes determine the performance of many vacuum-based electron sources. A corroborative project with the Thomas Jefferson National Accelerator Facility involves studying the behavior of such electrodes after nitrogen ion implantation. A Plasma Source Ion Implantation (PSII) facility is designed and constructed at William and Mary, and used to treat stainless steel electrodes. PSII is a novel implantation technique developed at the University of Wisconsin-Madison. A workpiece is submerged in a quiescent plasma of the species to be implanted. A series of high, negative voltages (30--100 kV) is applied to the …
Surface Processing By Rfi Pecvd And Rfi Psii, Lingling Wu
Surface Processing By Rfi Pecvd And Rfi Psii, Lingling Wu
Dissertations, Theses, and Masters Projects
An RFI plasma enhanced chemical vapor deposition (PECVD) system and a large-scale RF plasma source immersion ion implantation (PSII) system were designed and built to study two forms of 3-D surface processing, PECVD and PSII. Using the RFI PECVD system, Ti-6Al-4V substrates were coated with diamond-like carbon films with excellent tribological and optical properties. as an innovation, variable angle spectroscopic ellipsometry (VASE) was successfully applied for non-destructive, 3-D, large-area tribological coatings quality investigation.;Based on the experience with the RFI PECVD system, a large-scale RFICP source was designed and built for the PSIL Langmuir probe and optical emission spectroscopy studies indicated …