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Full-Text Articles in Engineering
Sensitivity Of High-Speed Lightwave System Receivers Using Inalas Avalanche Photodiodes, Daniel S.G. Ong, Majeed M. Hayat, John P.R. David, Jo Shien Ng
Sensitivity Of High-Speed Lightwave System Receivers Using Inalas Avalanche Photodiodes, Daniel S.G. Ong, Majeed M. Hayat, John P.R. David, Jo Shien Ng
Electrical and Computer Engineering Faculty Research and Publications
Calculations based on a rigorous analytical model are carried out to compare the sensitivity of optical receivers that use InP and In0.52Al0.48As avalanche photodiodes (APDs). The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration, dead space, and transimpedance amplifier noise. For a 10-Gb/s system with a bit-error rate of 10-12, the optimum receiver sensitivity predicted for In0.52Al0.48As and InP APDs is -28.6 and -28.1 dBm, respectively, corresponding to a reduction of 11% in optical signal power for receivers using …
Nano-Electromechanical Zero-Dimensional Freestanding Nanogap Actuator, Jun Hyun Han, Norimasa Yoshimizu, T.J. Cheng, Michael Ziwisky, S.A. Bhave, A. Lal, Chung-Hoon Lee
Nano-Electromechanical Zero-Dimensional Freestanding Nanogap Actuator, Jun Hyun Han, Norimasa Yoshimizu, T.J. Cheng, Michael Ziwisky, S.A. Bhave, A. Lal, Chung-Hoon Lee
Electrical and Computer Engineering Faculty Research and Publications
Micromachined free standing nanogap with metal electrodes is presented. The gap size is as small as 17 nm, and can be reduced further with electrostatic or piezoelectric actuation. The nanoscale gap is fabricated by industrial standard optical lithography and anisotropic wet chemical Si etching. Electron transport between the metal electrodes with optical stimulus enhancing photon-electron coupling (plasmon) is presented.