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Phonon-Drag Contribution To Seebeck Coefficient Of Ge-On-Insulator Substrate Fabricated By Wafer Bonding Process, Veerappan Manimuthu, Shoma Yoshida, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan, Yoshinari Kamakura, Yasuhiro Hayakawa, Hiroya Ikeda
Phonon-Drag Contribution To Seebeck Coefficient Of Ge-On-Insulator Substrate Fabricated By Wafer Bonding Process, Veerappan Manimuthu, Shoma Yoshida, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan, Yoshinari Kamakura, Yasuhiro Hayakawa, Hiroya Ikeda
Makara Journal of Technology
In order to build high-sensitivity infrared photodetectors using SiGe nanowires, we investigate the thermoelectric characteristics of Ge-on-insulator (GOI) layers as a reference for SiGe. We fabricate p-type GOI substrates with an impurity concentration of 1016-1018cm-3 by a wafer-bonding process using Ge and oxidized Si wafers. Annealing treatment is performed in order to further increase the bonding strength of Ge/SiO2 interface. We measure the Seebeck coefficient in the temperature range of 290-350 K. The Seebeck coefficient of the GOI layers is very close to the theoretical value for Ge, calculated on the basis of carrier transport. Hence, there is a small …
Seebeck Coefficient Of Soi Layer Induced By Phonon Transport, Faiz Salleh, Takuro Oda, Yuhei Suzuki, Yoshinari Kamakura, Hiroya Ikeda
Seebeck Coefficient Of Soi Layer Induced By Phonon Transport, Faiz Salleh, Takuro Oda, Yuhei Suzuki, Yoshinari Kamakura, Hiroya Ikeda
Makara Journal of Technology
The Seebeck coefficient of a patterned Si wire on P-doped SOI (Si-on-insulator) layer with a carrier concentration of 1018 cm-3 was measured near room temperature. The Seebeck coefficient is found to be smaller than that in the SOI layer and to be closer to the calculated Seebeck coefficient including the electronic contribution. The decrease in the Seebeck coefficient of Si wire is likely to occur due to the elimination of the contribution of phonon drag part. From the theoretical calculation of scattering rates by considering the scattering processes in phonon system, it is considered that an increase in phonon-boundary scattering …
Development Of Seebeck-Coefficient Measurement Systems Using Kelvin-Probe Force Microscopy, Kazutoshi Miwa, Faiz Salleh, Hiroya Ikeda
Development Of Seebeck-Coefficient Measurement Systems Using Kelvin-Probe Force Microscopy, Kazutoshi Miwa, Faiz Salleh, Hiroya Ikeda
Makara Journal of Technology
Thermoelectric device is investigated by a number of researchers in order to enhance the thermoelectric efficiency. It is known that the efficiency can be improved by quantum effect. However, it is difficult to measure the thermoelectric characteristics of nanometer-scale structures. Thus a new measurement method is expected to be developed. We propose to apply Kelvin-probe force microscopy (KFM) to characterization of thermoelectric materials. KFM can locally observe surface potential of Fermi energy of a sample without touching the sample surface. In the present paper, we estimate the Seebeck coefficient of thin Si-on-insulator layers using KFM.