Engineering Commons^™

The Effect Of Nanostructure On The Electrical Properties Of Metal Oxide Materials, Philip Zachary Rice

Legacy Theses & Dissertations (2009 - 2024)

Resistive random access memory (ReRAM) is a potential replacement technology for Flash and other memory implementations. Advantages of ReRAM include increased scalability, low power operation, and compatibility with silicon semiconductor manufacturing. Most of the ReRAM devices described to date have utilized thin film based metal oxide dielectrics as a resistive switching matrix. The goal of this dissertation project has been to investigate the resistive switching behavior of nanoparticulate metal oxides and to develop methods to utilize these materials in ReRAM device fabrication. To this end, nanoparticles of TiO₂ and HfO₂ were synthesized under a variety of conditions resulting …