Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Chain-Scission (1)
- Dielectric films (1)
- EUV (1)
- Extreme ultraviolet lithography (1)
- Hafnium Oxide (1)
-
- Hafnium compounds (1)
- Hydrogen Silsesquioxane (1)
- Ligands (1)
- Lithography (1)
- MORE (1)
- Metallic oxides (1)
- Nanoparticles (1)
- Nonvolatile random-access memory (1)
- Organometallic compounds (1)
- Photoresist (1)
- Photoresists (1)
- Resist (1)
- Resistive Memory (1)
- Scission (Chemistry) (1)
- Silicon Oxide (1)
- Titanium Oxide (1)
Articles 1 - 2 of 2
Full-Text Articles in Engineering
The Effect Of Nanostructure On The Electrical Properties Of Metal Oxide Materials, Philip Zachary Rice
The Effect Of Nanostructure On The Electrical Properties Of Metal Oxide Materials, Philip Zachary Rice
Legacy Theses & Dissertations (2009 - 2024)
Resistive random access memory (ReRAM) is a potential replacement technology for Flash and other memory implementations. Advantages of ReRAM include increased scalability, low power operation, and compatibility with silicon semiconductor manufacturing. Most of the ReRAM devices described to date have utilized thin film based metal oxide dielectrics as a resistive switching matrix. The goal of this dissertation project has been to investigate the resistive switching behavior of nanoparticulate metal oxides and to develop methods to utilize these materials in ReRAM device fabrication. To this end, nanoparticles of TiO2 and HfO2 were synthesized under a variety of conditions resulting …
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Novel Resist Systems For Euv Lithography : Ler, Chain-Scission, Nanoparticle And More, Brian Cardineau
Legacy Theses & Dissertations (2009 - 2024)
Extreme Ultraviolet (EUV) lithography is currently the best option for replacing 193-nm lithography in future IC fabrication. For EUV to be successful, however, there are a number of challenges that must be overcome. Current resist designs struggle to meet the demands of future lithography nodes. We propose the best way to overcome these obstacles is through the design of novel resist systems.