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Current Density-Anodic Potential Curves Of Single Crystal Gaas At Low Currents In Koh, Martin E. Straumanis, J. P. Krumme, William Joseph James

Materials Science and Engineering Faculty Research & Creative Works

Single p-type, GaAs crystals of high purity, Zn doped, were used to determine whether or not the inverse octahedral {111} faces show potential differences and various rates of anodic dissolution. The Ga{111}, As{111}, {110}, and {100} faces, were polished, etched, and etch-polished with concentrated H₂SO₄ + H₂O₂, and immersed in IN KOH. The Ga{111} faces were found to be the most noble with respect to rest and anodic dissolution potentials. The potential difference between the inverse {111} faces was as large as 0.14v for the rest and 0.123v for the dissolution potentials. The …