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Full-Text Articles in Engineering

Research And Development Of Optically Transparent Join With Low Processing Temperatures, Eric Kevin Muskovin Jan 2018

Research And Development Of Optically Transparent Join With Low Processing Temperatures, Eric Kevin Muskovin

Masters Theses

The purpose of this study was to investigate durable solar cell cover glass joins produced by diffusion bonding with deep eutectic solvents (DES) and to develop a novel process of joining optically transparent materials at low temperatures. A joined PV cell-glass specimen was characterized using Raman, μ-FTIR, SEM-EDS, and thin-film XRD. DESs were created with malonic acid (MAL) and choline chloride (ChCl) of varying composition factors (CF; CF=MAL/ChCl). Joining borosilicate glass coupons was attempted using DESs with CF = 0.65 and 1 at temperatures between 100-150 °C for 20 hours. Joining the glass coupons failed at all temperatures and oxygen …


Electrodeposited Epitaxial Cobalt Oxides And Copper Metal, Caleb M. Hull Jan 2018

Electrodeposited Epitaxial Cobalt Oxides And Copper Metal, Caleb M. Hull

Doctoral Dissertations

"Electrochemical deposition methods are presented for the deposition of Co(OH)2 and Cu metal. Paper I shows the deposition of β-Co(OH)2 on Ti through electrochemical reduction of [Co(en)3]3+ to [Co(en)3]2+ in 2M NaOH. The catalytic properties of the deposited Co(OH)2 towards water oxidation is found comparable to Co3O4, with the surface of the Co(OH)2 converting to CoOOH during the reaction. Paper II gives the conditions suitable for epitaxial growth of Co(OH)2 on Au(100), Au(110), and Au(111) following the same reduction mechanism as described in Paper I. …


Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar Jan 2018

Electrodeposited Semiconductor Nanostructures & Epitaxial Thin Films For Flexible Electronics, Naveen Kumar Mahenderkar

Doctoral Dissertations

"Single-crystal Si is the bedrock of semiconductor devices due to the high crystalline perfection which minimizes electron-hole recombination, and the dense native silicon oxide which minimizes surface states. To expand the palette of electronic materials beyond planar Si, an inexpensive source of highly ordered material is needed that can serve as an inert substrate for the epitaxial growth of grain boundary-free semiconductors, photonic materials, and superconductors. There is also a need for a simple, inexpensive, and scalable fabrication technique for the growth of semiconductor nanostructures and thin films. This dissertation focuses on the fabrication of semiconducting nanowires (polycrystalline Ge & …