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Chemical Engineering

Papers in Reaction Kinetics

1992

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Modeling Of A-Si : H Deposition In A Dc Glow Discharge Reactor, Dariusz Orlicki, Vladimir Hlavacek, Hendrik J. Viljoen Aug 1992

Modeling Of A-Si : H Deposition In A Dc Glow Discharge Reactor, Dariusz Orlicki, Vladimir Hlavacek, Hendrik J. Viljoen

Papers in Reaction Kinetics

PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar-SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and the numerical results show that the deposition …


Temperature Oscillations Of Alternating-Current-Heated Thin Filaments In Ceramic Fiber Production, Hendrik J. Viljoen, Vladimir Hlavacek Mar 1992

Temperature Oscillations Of Alternating-Current-Heated Thin Filaments In Ceramic Fiber Production, Hendrik J. Viljoen, Vladimir Hlavacek

Papers in Reaction Kinetics

Resistively heated filaments are used to manufacture ceramic fibers. When an ac power source is used for heating, the temperature of the filament oscillates. These oscillations influence the deposition rate on the surface of the filament. An analysis of this problem is presented, and it is also shown that these oscillatory effects diminish as the filament gauge increases. The analysis can help to decide whether an ac or a dc power source should be used.