Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Determination Of Work Functions In The Ta1-XAlXNY/Hfo2 Advanced Gate Stack Using Combinatorial Methodology, Kao-Shuo Chang, Martin Green, Jason Hattrick-Simpers, Ichiro Takeuchi, J. Suehle, O. Celik, S. De Gendt
Determination Of Work Functions In The Ta1-XAlXNY/Hfo2 Advanced Gate Stack Using Combinatorial Methodology, Kao-Shuo Chang, Martin Green, Jason Hattrick-Simpers, Ichiro Takeuchi, J. Suehle, O. Celik, S. De Gendt
Jason R. Hattrick-Simpers
No abstract provided.
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. Green, J. Suehle, E. Vogel, H. Xiong, Jason Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. Green, J. Suehle, E. Vogel, H. Xiong, Jason Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Jason R. Hattrick-Simpers
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloymetal gate electrode systems.