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Full-Text Articles in Engineering
The Greenest Solar Power? Life Cycle Assessment Of Foam-Based Flexible Floatovoltaics, Koami Soulemane Hayibo, Pierce Mayville, Joshua M. Pearce
The Greenest Solar Power? Life Cycle Assessment Of Foam-Based Flexible Floatovoltaics, Koami Soulemane Hayibo, Pierce Mayville, Joshua M. Pearce
Electrical and Computer Engineering Publications
This study presents a life cycle analysis (LCA) of a 10 MW foam-based floatovoltaics (FPV) plant installed on Lake Mead, Nevada, U.S. A material inventory of the flexible crystalline silicon (c-Si)-based module involved massing and determination of material composition of the module's encapsulation layers with ATR/FTR spectroscopy and electron microscopy. The LCA was performed using SimaPro and the results were interpreted in terms of cumulative energy demands, energy payback time, global warming potential, GHG emissions, and water footprint including negative values for reduced evaporation. A sensitivity analysis was performed on the lifetime of the modules and the foam-based racking. The …
Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng
Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng
Electrical and Computer Engineering Publications
In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.