Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Chemical Engineering

Universitas Indonesia

Characterization

Publication Year

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Neutron Diffraction Study Of Multiferroic 0.6nife2o4/0.4batio3 Composite, Engkir Sukirman, Yosef Sarwanto, Syahfandi Ahda, Andon Insani Dec 2019

Neutron Diffraction Study Of Multiferroic 0.6nife2o4/0.4batio3 Composite, Engkir Sukirman, Yosef Sarwanto, Syahfandi Ahda, Andon Insani

Makara Journal of Technology

Neutron diffraction study on the 0.6NiFe2O4/0.4BaTiO3 multiferroic composite has been carried out. The 0.6NiFe2O4/0.4BaTiO3 multiferroic composites have been synthesized by solid reaction method. In this study, 20 g of BaTiO3 (BTO) and 20 g of NiFe2O4 (NFO) compounds were prepared from the powder raw materials of BaO3 and TiO2 for BTO, and NiO and Fe2O3 for NFO. Furthermore, both BTO and NFO were each crushed for 5 hours using High Energy Milling (HEM). Then the BTO and NFO were calcined in the furnace at 950 °C/5 hours and 900 °C/5 hours, respectively. Both NFO and BTO precursors were manually mixed …


Effects Of Deposition Parameters And Oxygen Addition On Properties Of Sputtered Indium Tin Oxide Films, Badrul Munir, Rachmat Adhi Wibowo, Kim Kyoo Ho Nov 2012

Effects Of Deposition Parameters And Oxygen Addition On Properties Of Sputtered Indium Tin Oxide Films, Badrul Munir, Rachmat Adhi Wibowo, Kim Kyoo Ho

Makara Journal of Technology

Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of …