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Full-Text Articles in Engineering

A New Microsensor System For Plant Root Zone Monitoring, Chang-Soo Kim, Sandeep Sathyan, D. M. Porterfield Jan 2005

A New Microsensor System For Plant Root Zone Monitoring, Chang-Soo Kim, Sandeep Sathyan, D. M. Porterfield

Electrical and Computer Engineering Faculty Research & Creative Works

The objective of this work is to develop a new microsensor system that can monitor dissolved oxygen and hydration environment at the plant root zone. A miniaturized plant growth system is prepared including the root zone layer, either a porous ceramic tube or porous ceramic wafer on which the plant is grown, and an underlying fluidic channel to deliver nutrients and water to the root zone. We demonstrate the feasibility of using a flexible microsensor array for dissolved oxygen detection, and a four-electrode impedance microelectrode for wetness detection on the surface of a porous tube nutrient delivery system. The unique …


Configuration For Micro Ph Sensor, Young-Jin Kim, Young-Chul Lee, Byung-Ki Sohn, Chang-Soo Kim, Jung-Hee Lee Oct 2003

Configuration For Micro Ph Sensor, Young-Jin Kim, Young-Chul Lee, Byung-Ki Sohn, Chang-Soo Kim, Jung-Hee Lee

Electrical and Computer Engineering Faculty Research & Creative Works

A fully integrated pH sensor with a built-in reference electrode is proposed. An iridium oxide microelectrode and a pH-insensitive field-effect transistor are used as a pH sensor and a reference electrode, respectively. The sensitivity of the proposed device matches well with the estimated value to within 0.3 mV/pH deviation.


Miniaturized Isfet Glucose Sensor Including A New Structure Actuation System, Chang-Soo Kim, Hwa-Il Seo, Chae-Hyang Lee, Byung-Ki Sohn Jan 1997

Miniaturized Isfet Glucose Sensor Including A New Structure Actuation System, Chang-Soo Kim, Hwa-Il Seo, Chae-Hyang Lee, Byung-Ki Sohn

Electrical and Computer Engineering Faculty Research & Creative Works

A new principle of an amperometric actuation technique was incorporated in the ISFET glucose sensor. The ISFET is fabricated by the CMOS process and the platinum working electrode is deposited by the lift-off process. A sensor with a specially designed ladder type working electrode exhibits improved operation in response time, response magnitude and detection range. An expectation concerning the reduction of sensor size is also discussed.