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A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer, Jong Hyuni Choi, Chang-Soo Kim, Byung Cheon Lim, Jin Jang
A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer, Jong Hyuni Choi, Chang-Soo Kim, Byung Cheon Lim, Jin Jang
Electrical and Computer Engineering Faculty Research & Creative Works
We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.