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Features Of Liquid-Phase Epitaxy Of (Gaas)1-X(Znse)X Solid Solution From The Tin Solution-Melt, Amin Safarbaevich Saidov, Dadazhon Valikhanovich Saparov, Shukrullo Negmatovich Usmonov, Kurban Gulmuratovich Gaimnazarov, Mansurbek Kilichovich Sultanov
Features Of Liquid-Phase Epitaxy Of (Gaas)1-X(Znse)X Solid Solution From The Tin Solution-Melt, Amin Safarbaevich Saidov, Dadazhon Valikhanovich Saparov, Shukrullo Negmatovich Usmonov, Kurban Gulmuratovich Gaimnazarov, Mansurbek Kilichovich Sultanov
Bulletin of Gulistan State University
Layers of (GaAs)1-x(ZnSe)x (0 x 0.80) molecular substitution solid solutions with a smoothly (but not monotonically) varying composition on monocrystal GaAs (100) substrates were grown by liquid-phase epitaxy from a limited volume of a tin solution-melt. Based on the results of the solubility of GaAs, ZnSe in tin and the phase diagram of binary systems Ga-Sn, As-Sn, Zn-Sn and Sn-Se, it is shown that binary compounds in the tin solvent at temperatures of 650-750°C are below the melting point of the corresponding materials are found mainly in the form of GaAs and ZnSe molecules. Moreover, in the temperature …
Features Of Growing Solid Solution (Si2)1-X(Gаp)X And Radiative Properties Of Structures On Its Basis, A.S Saidov, S.N Usmonov, D.V Saparov, Sh.K Niyazov
Features Of Growing Solid Solution (Si2)1-X(Gаp)X And Radiative Properties Of Structures On Its Basis, A.S Saidov, S.N Usmonov, D.V Saparov, Sh.K Niyazov
Bulletin of Gulistan State University
The epitaxial layers of the (Si2) x (GaP) 1-x solid solution were grown from the liquid phase. It was shown that semiconductor compounds A3B5, when dissolved in metallic solvents, at temperatures below their melting points, are found mainly in the form of molecules and do not break up into separate atoms. The emission of red light was observed when a forward bias of 8-12 V was applied to the nGaP-n+(Si2) x (GaP) 1-x structure, which indicates the energy level formed by silicon molecules in the forbidden zone of gallium phosphide. From the photoluminescence spectrum of the (Si2)x(GaP)1-x solid solution, the …
Dependence Of The Size Of The Thermoelectric Effect In The Varieson Solid Solution Si1-Xgex (0≤X≤1) On The Content Of Germany (Ge 100%, 100% ÷ 55%, 100% ÷ 20%)., Аmin Safarbaevich Saidov, Аbduvoxid Berkinovich Karshiev, Ibroxim Turdibekov, Shaxriddin Xolmurodov
Dependence Of The Size Of The Thermoelectric Effect In The Varieson Solid Solution Si1-Xgex (0≤X≤1) On The Content Of Germany (Ge 100%, 100% ÷ 55%, 100% ÷ 20%)., Аmin Safarbaevich Saidov, Аbduvoxid Berkinovich Karshiev, Ibroxim Turdibekov, Shaxriddin Xolmurodov
Bulletin of Gulistan State University
For the first time, a thermoelectric effect was observed in a graded-gap continuous Si1-xGex solid solution (0≤x≤1). The graded-gap Si1-xGex solid solution (0≤x≤1) was grown from a limited volume of the Sn-Si-Ge melt solution by liquid-phase epitaxy on n-type silicon substrates with an orientation of <111> in the temperature range 1000 ÷ 7500С. Samples with dimensions were made from the obtained materials: length - 8mm; width - 5 mm. Solid solution films grown on substrates with an orientation of <111> had a single-crystal character. Ohmic contacts were made to the obtained structures by sputtering silver. On each film of the solid solution, …