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Design, Simulation And Fabrication Of A Mems In-Situ Contactless Sensor To Detect Plasma Induced Damage During Reactive Ion Etching, Subramanian Ganesh
Design, Simulation And Fabrication Of A Mems In-Situ Contactless Sensor To Detect Plasma Induced Damage During Reactive Ion Etching, Subramanian Ganesh
Theses
The present trend in the semiconductor industry is towards submicron devices. An inevitable process technique in achieving this is by reactive ion etching of the polysilicon gate. During RIE, the gate oxide may get damaged due to several causes. One of the main causes of the damage is the non-uniformity of the plasma. It is reported that these plasma inconsistencies are mainly due to electrode design and that they create spatial plasma potential fluctuation. These fluctuations are reported to be in the range of 10-20 Volts. By providing an in-situ monitoring of the wafers, the reliability of the device could …