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Optimization Of The Two Stage Process For Cu(In,Ga)Se2 Solar Cells, Shirish Pethe

USF Tampa Graduate Theses and Dissertations

Copper Indium Gallium DiSelenide absorber layers are fabricated using a two stage manufacturing friendly process. The first step involves the sequential deposition of Copper and Gallium and co-deposition of indium and selenium at 275oC. This is followed by the second stage where the substrate is annealed in the presence of Selenium and a thin layer of copper is deposited to neutralize the excess Indium and Gallium on the surface to form the CIGS absorber layer. The top copper thickness as well as the time of deposition was varied to study the effect of Copper on the performance of the cells. …

Fabrication Of Cigs Absorber Layers Using A Two-Step Process For Thin Film Solar Cell Applications, Harish Sankaranarayanan

USF Tampa Graduate Theses and Dissertations

Copper Indium Gallium DiSelenide absorber layers are fabricated using a two step manufacturing-friendly process. The first step involves the sequential deposition of Copper and Gallium and codeposition of Indium and Selenium, not necessarily in that order, at 275^o C. This is followed by the second stage, where the substrate is annealed in the presence of Selenium and a thin layer of Copper is deposited to neutralize the excess Indium and Gallium on the surface to form the Copper Indium Gallium diSelenide absorber layer. Elimination of the need for high degree of control and elimination of toxic gases like hydrogen …

Characterization Of Cadmium Zinc Telluride Films And Solar Cells On Glass And Flexible Substrates By Rf Sputtering, Jagadish Gaduputi

USF Tampa Graduate Theses and Dissertations

High performance multijunction solar cells based on polycrystalline thin films will require a wide bandgap top cell with at least 15% efficiency. With the bottom cell being CIGS which have already demonstrated the required efficiencies, this work aims to study the complete fabrication and performance of Cd_1-xZn_xTe solar cells with a bandgap of 1.7eV on glass and flexible polyimide substrates.

Cd_1-xZn_xTe films were deposited by RF magnetron co-sputtering with CdTe and ZnTe sources. By varying the composition of Cd_1-xZn_xTe being deposited the required bandgap of 1.7eV was achieved. …