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Model Correction For The Formation Of Amorphous Silicon By Ion Implantation, John Robert Dennis

Masters Theses

"ESR has been used to study the formation of an amorphous layer in silicon by ion implantation. The room temperature implants were done at 20 keV with low dose rates. The critical dose was determined as a function of ion mass for six different ion species. Our experimental heavy ion results agree with those found by other ESR investigators at higher energy, but are not the same for light ions. However, our light and heavy ion results agree with electron microscope measurements for low energy implants. An energy-independent model for the formation of amorphous silicon by ion implantation has …