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High-Field Electron Transport In Doped Zno, L. Ardaravičius, O. Kiprijanovič, J. Liberis, M. Ramonas, E. Šermukšnis, A. Matulionis, M. Toporkov, V. Avrutin, Ü. Özgür, H. Morkoç
High-Field Electron Transport In Doped Zno, L. Ardaravičius, O. Kiprijanovič, J. Liberis, M. Ramonas, E. Šermukšnis, A. Matulionis, M. Toporkov, V. Avrutin, Ü. Özgür, H. Morkoç
Electrical and Computer Engineering Publications
Current-voltage characteristics have been measured for ZnO:Ga and Zn:Sb epitaxial layers with electron densities ranging from 1.4x10(17) cm(-3) to 1.1 x 10(20) cm(-3). Two-terminal samples with coplanar electrodes demonstrate virtually ohmic behavior until thermal effects come into play. Soft damage of the samples takes place at high currents. The threshold power (per electron) for the damage is nearly inversely proportional to the electron density over a wide range of electron densities. Pulsed voltage is applied in order to minimize the thermal effects, and thus an average electric field of 150 kV cm(-1) is reached in some samples subjected to 2 …