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Inas Quantum Dot Vertical-Cavity Lasers, Alexander R. Albrecht
Inas Quantum Dot Vertical-Cavity Lasers, Alexander R. Albrecht
Physics & Astronomy ETDs
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have demonstrated excellent device performance, including low sensitivity to operating temperature and record-low thresholds. In this dissertation, the application of QDs in vertical-cavity lasers (VCLs) is investigated. QDs can reach an emission wavelength up to 1300 nm on GaAs substrate. Key design and device processing issues are discussed and vertical-cavity surface emitting lasers (VCSELs) with both optical and electrical excitation are fabricated. VCSEL diodes with distributed Bragg reflectors (DBRs) formed by selective wet oxidation of AlAs, as well as standard GaAs/AlGaAs mirrors were processed. The latter performed better due …
Development Of Indium Arsenide Quantum Dot Solar Cells For High Conversion Efficiency, Mohamed El-Emawy
Development Of Indium Arsenide Quantum Dot Solar Cells For High Conversion Efficiency, Mohamed El-Emawy
Electrical and Computer Engineering ETDs
Sunlight is the largest energy source available on earth. Under clear conditions there is approximately 1,000 watts per directly incident square meter, which reaches the earth everyday. Solar cells are devices that can be used to collect such abundant form of energy and convert it into electrical energy for daily consumption. Therefore, it is important to research this subject in order to obtain high efficiency solar cells. In this thesis InAs quantum dot (QD) solar cells are studied and investigated. The theory of using QDs as an intermediate band in GaAs-based solar cells is introduced. Three samples are grown for …