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Poly(3-Hexylthiophene) Crystalline Nanoribbon Network For Organic Field Effect Transistors, M. Arif, Jianhua Liu, Lei Zhai, Saiful I. Khondaker
Poly(3-Hexylthiophene) Crystalline Nanoribbon Network For Organic Field Effect Transistors, M. Arif, Jianhua Liu, Lei Zhai, Saiful I. Khondaker
Faculty Bibliography 2010s
We report on the fabrication of crystalline nanoribbon network field effect transistors (FETs) using low molecular weight (M(W)) poly(3-hexylthiophene) (P3HT) with different surface treatments and compare with thin film FETs cast from the same M(W) regioregular P3HT. Nanoribbon FET shows improved performance with a maximum mobility of 0.012 cm(2)/V s and current on/off ratios of 6.5x10(4) due to unique crystalline structure and morphology. With various surface treatments, the nanoribbon FETs show less variation in device mobilities, while thin film FETs show more than ten times variation in device mobilities and up to 100 times change in current on/off ratios.
Graphene-Like Silicon Nanoribbons On Ag(110): A Possible Formation Of Silicene, Bernard Aufray, Abdelkader Kara, Sébastien Vizzini, Hamid Oughaddou, Christel Léandri, Benedicte Ealet, Guy Le Lay
Graphene-Like Silicon Nanoribbons On Ag(110): A Possible Formation Of Silicene, Bernard Aufray, Abdelkader Kara, Sébastien Vizzini, Hamid Oughaddou, Christel Léandri, Benedicte Ealet, Guy Le Lay
Faculty Bibliography 2010s
Scanning tunneling microscopy (STM) and ab initio calculations based on density functional theory (DFT) were used to study the self-aligned silicon nanoribbons on Ag(110) with honeycomb, graphene-like structure. The silicon honeycombs structure on top of the silver substrate is clearly observed by STM, while the DFT calculations confirm that the Si atoms adopt spontaneously this new silicon structure.
Dispersion Measurements Of A 1.3 Mu M Quantum Dot Semiconductor Optical Amplifier Over 120 Nm Of Spectral Bandwidth, M. Bagnell, J. Davilla-Rodriguez, A. Ardey, P. J. Delfyett
Dispersion Measurements Of A 1.3 Mu M Quantum Dot Semiconductor Optical Amplifier Over 120 Nm Of Spectral Bandwidth, M. Bagnell, J. Davilla-Rodriguez, A. Ardey, P. J. Delfyett
Faculty Bibliography 2010s
Group delay and higher order dispersion measurements are conducted on a 1.3 mu m quantum dot semiconductor optical amplifier at various injection currents. White-light spectral interferometry is performed, along with a wavelet transform to recover the group delay. The group delay, group velocity dispersion, and higher order dispersion terms are quantified. The measurement spans both ground state and first excited state transitions, ranging from 1200 to 1320 nm. The group velocity dispersion, beta(2), is found to be -6.3x10(3) fs(2) (7.6 fs/nm) at an injection current of 500 mA.
B Diffusion In Implanted Ni2si And Nisi Layers, I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, G. Tellouche, V. Carron
B Diffusion In Implanted Ni2si And Nisi Layers, I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, G. Tellouche, V. Carron
Faculty Bibliography 2010s
B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.
Poly(3-Hexylthiophene) Crystalline Nanoribbon Network For Organic Field Effect Transistors (Vol 96, 243304, 2010), M. Arif, Jianhua Liu, Lei Zhai, Saiful I. Khondaker
Poly(3-Hexylthiophene) Crystalline Nanoribbon Network For Organic Field Effect Transistors (Vol 96, 243304, 2010), M. Arif, Jianhua Liu, Lei Zhai, Saiful I. Khondaker
Faculty Bibliography 2010s
No abstract provided.
Evidence Of Graphene-Like Electronic Signature In Silicene Nanoribbons, Paola De Padova, Claudio Quaresima, Carlo Ottaviani, Polina M. Sheverdyaeva, Paolo Moras, Carlo Carbone, Dinesh Topwal, Bruno Olivieri, Abdelkader Kara, Hamid Oughaddou, Bernard Aufray, Guy Le Lay
Evidence Of Graphene-Like Electronic Signature In Silicene Nanoribbons, Paola De Padova, Claudio Quaresima, Carlo Ottaviani, Polina M. Sheverdyaeva, Paolo Moras, Carlo Carbone, Dinesh Topwal, Bruno Olivieri, Abdelkader Kara, Hamid Oughaddou, Bernard Aufray, Guy Le Lay
Faculty Bibliography 2010s
We report on the electronic properties of straight, 1.6 nm wide, silicene nanoribbons on Ag(110), arranged in a one-dimensional grating with a pitch of 2 nm, whose high-resolution scanning tunneling microscopy images reveal a honeycomb geometry. Angle-resolved photoemission shows quantum confined electronic states of one-dimensional character. The silicon band dispersion along the direction of the nanoribbons suggests a behavior analogous to the Dirac cones of graphene on different substrates.
Position Dependent Photodetector From Large Area Reduced Graphene Oxide Thin Films, Surajit Ghosh, Biddut K. Sarker, Anindarupa Chunder, Lei Zhai, Saiful I. Khondaker
Position Dependent Photodetector From Large Area Reduced Graphene Oxide Thin Films, Surajit Ghosh, Biddut K. Sarker, Anindarupa Chunder, Lei Zhai, Saiful I. Khondaker
Faculty Bibliography 2010s
We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases, or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemical synthesis and interconnecting sheets.
Investigation Of The Behavior Of Serum And Plasma In A Microfluidics System, J. Caroline Henderson, Michele Yacopucci, Chang Ju Chun, Keith Lenghaus, Frank Sommerhage, James J. Hickman
Investigation Of The Behavior Of Serum And Plasma In A Microfluidics System, J. Caroline Henderson, Michele Yacopucci, Chang Ju Chun, Keith Lenghaus, Frank Sommerhage, James J. Hickman
Faculty Bibliography 2010s
There are common problems with adsorption of analytes on the surfaces of microfluidic systems with physiological samples such as blood serum, plasma, and urine. The authors' investigation involves the interaction of serum components with fused-silica surfaces under various flow regimes in microcapillaries. Their focus will include the individual components of serum as well as fresh whole serum. The authors studied the whole serum components in our microfluidic system to uncover the responses of proteins in capillary and microchannel surfaces when influenced by the highly variable serum constituents. They have observed the whole serum with a total protein assay by using …
Multiplexed Biomarker Detection Using X-Ray Fluorescence Of Composition-Encoded Nanoparticles, Mainul Hossain, Chaoming Wang, Ming Su
Multiplexed Biomarker Detection Using X-Ray Fluorescence Of Composition-Encoded Nanoparticles, Mainul Hossain, Chaoming Wang, Ming Su
Faculty Bibliography 2010s
Multiple DNA and protein biomarkers have been detected based on characteristic x-ray fluorescence of a panel of metal and alloy nanoparticles, which are modified with ligands of biomarkers to create a one-to-one correspondence and immobilized on ligand-modified substrates after forming complexes with target biomarkers in three-strand or sandwich configuration. By determining the presence and concentration of nanoparticles using x-ray fluorescence, the nature and amount of biomarkers can be detected with limits of 1 nM for DNA and 1 ng/ml for protein. By combining high penetrating ability of x-rays, this method allows quantitative imaging of multiple biomarkers.
Crystal Coherence Length Effects On The Infrared Optical Response Of Mgo Thin Films, J. F. Ihlefeld, J. C. Ginn, D. J. Shelton, V. Matias, M. A. Rodriguez, P. G. Kotula, J. F. Carroll Iii, G. D. Boreman, P. G. Clem, M. B. Sinclair
Crystal Coherence Length Effects On The Infrared Optical Response Of Mgo Thin Films, J. F. Ihlefeld, J. C. Ginn, D. J. Shelton, V. Matias, M. A. Rodriguez, P. G. Kotula, J. F. Carroll Iii, G. D. Boreman, P. G. Clem, M. B. Sinclair
Faculty Bibliography 2010s
The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.
Theoretical Calculations Of Hydrogen Adsorption By Sno2 (110) Surface: Effect Of Doping And Calcination, Talgat M. Inerbaev, Yoshiyuki Kawazoe, Sudipta Seal
Theoretical Calculations Of Hydrogen Adsorption By Sno2 (110) Surface: Effect Of Doping And Calcination, Talgat M. Inerbaev, Yoshiyuki Kawazoe, Sudipta Seal
Faculty Bibliography 2010s
A pseudopotential plane-wave based density functional theory simulations of the hydrogen adsorption on rutile SnO2 (110) surface is reported. It is found that on doping with trivalent indium, the surface becomes unstable due to the formation of bridging oxygen vacancies. At sufficiently low doping level, the surface stabilizes at an oxygen vacancy to indium ratio of 1:2. Our calculations predict that at a higher doping level of 9 at. %, this ratio becomes larger, and point out a way to synthesize p-type conducting SnO2 thin films. The binding energy of SnO2 (110) surface with adsorbed hydrogen atoms display a maximum …
Low Voltage And High Transmittance Blue-Phase Liquid Crystal Displays With Corrugated Electrodes, Meizi Jiao, Yan Li, Shin-Tson Wu
Low Voltage And High Transmittance Blue-Phase Liquid Crystal Displays With Corrugated Electrodes, Meizi Jiao, Yan Li, Shin-Tson Wu
Faculty Bibliography 2010s
A low voltage ( < 10 V) and high transmittance (similar to 85.6%) polymer-stabilized blue-phase liquid crystal (BPLC) display is proposed. The periodic corrugated electrodes generate a strong horizontal field component to induce isotropic-to-anisotropic transition in the BPLC medium through Kerr effect. Moreover, this field is uniformly distributed across the entire LC layer so that the accumulated phase retardation along the beam path is large, resulting in low voltage and high transmittance. This approach enables BPLC to be addressed by amorphous-silicon thin film transistors, which would accelerate its emergence as next-wave display technology.
Space Charge Limited Conduction With Exponential Trap Distribution In Reduced Graphene Oxide Sheets, Daeha Joung, A. Chunder, Lei Zhai, Saiful I. Khondaker
Space Charge Limited Conduction With Exponential Trap Distribution In Reduced Graphene Oxide Sheets, Daeha Joung, A. Chunder, Lei Zhai, Saiful I. Khondaker
Faculty Bibliography 2010s
We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75 x 10(16) cm(-3). Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.
Low Temperature Deformation Of The R-Phase In A Nitife Shape Memory Alloy, V. B. Krishnan, S. B. Shmalo, C. R. Rathod, M. A. M. Bourke, R. Vaidyanathan
Low Temperature Deformation Of The R-Phase In A Nitife Shape Memory Alloy, V. B. Krishnan, S. B. Shmalo, C. R. Rathod, M. A. M. Bourke, R. Vaidyanathan
Faculty Bibliography 2010s
Deformation in the P3 phase (R-phase) of NiTiFe was investigated by in situ neutron diffraction during compressive loading at cryogenic temperatures. At 216 K, upon loading the R-phase detwinned and subsequently underwent a reversible stress-induced transformation to the B19' phase (martensite). At 92 K on the other hand, detwinning was suppressed and the stress-induced martensite formed did not transform back upon unloading. The experiments also directly observed a hitherto theoretically predicted B33 phase. Rietveld refinement of the neutron diffraction spectra were used to determine lattice parameters of the B33 and R-phases. Plane-specific elastic moduli were also determined for the R-phase.
Structural Morphology Of Acoustically Levitated And Heated Nanosilica Droplet, Ranganathan Kumar, Erick Tijerino, Abhishek Saha, Saptarshi Basu
Structural Morphology Of Acoustically Levitated And Heated Nanosilica Droplet, Ranganathan Kumar, Erick Tijerino, Abhishek Saha, Saptarshi Basu
Faculty Bibliography 2010s
We study the vaporization and precipitation dynamics of a nanosilica encapsulated water droplet by levitating it acoustically and heating it with a CO(2) laser. For all concentrations, we observe three phases: solvent evaporation, surface agglomeration, and precipitation leading to bowl or ring shaped structures. At higher concentrations, ring reorientation and rotation are seen consistently. The surface temperature from an infrared camera is seen to be dependent on the final geometrical shape of the droplet and its rotation induced by the acoustic field of the levitator. With nonuniform particle distribution, these structures can experience rupture which modifies the droplet rotational speed.
Epitaxial Growth Of A Silicene Sheet, Boubekeur Lalmi, Hamid Oughaddou, Hanna Enriquez, Abdelkader Kara, Sébastien Vizzini, Bénidicte Ealet, Bernard Aufray
Epitaxial Growth Of A Silicene Sheet, Boubekeur Lalmi, Hamid Oughaddou, Hanna Enriquez, Abdelkader Kara, Sébastien Vizzini, Bénidicte Ealet, Bernard Aufray
Faculty Bibliography 2010s
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp(2)-sp(3) hybridizations.
Joint Fiber And Soa Impairment Compensation Using Digital Backward Propagation, Xiaoxu Li, Guifang Li
Joint Fiber And Soa Impairment Compensation Using Digital Backward Propagation, Xiaoxu Li, Guifang Li
Faculty Bibliography 2010s
An electronic scheme for joint postcompensation of fiber and semiconductor optical amplifier (SOA) impairments based on coherent detection and digital backward propagation is proposed and demonstrated. A 10-GBd amplitude-phase-modulated transmission system was demonstrated experimentally using semiconductor optical amplification. The Q-factor of the received signal was improved by 5 dB with simultaneous fiber and SOA impairment compensation in the electrical domain.
Superconducting Properties Of A Two-Dimensional Doped Semiconductor, V. M. Loktev, V. Turkowski
Superconducting Properties Of A Two-Dimensional Doped Semiconductor, V. M. Loktev, V. Turkowski
Faculty Bibliography 2010s
This is a study of the superconducting properties of a two-dimensional model with an additional (insulating) gap Delta(ins) that depends on temperature and doping. In particular, we study the doping dependence of the Berezinskii-Kosterlitz-Thouless critical temperature T(c) and the superconducting pseudogap temperature T(c)(MF) for different values of Delta(ins) by taking hydrodynamic fluctuations of the superconducting order parameter into account. We show that the gap Delta(ins) affects the values of the superconducting gap and the temperatures T(c) and T(c)(MF) within the range of carrier densities where the Delta(ins) approaches zero. In particular, the derivatives of these quantities have a jump in …
Optical Transmission Properties Of C-Shaped Subwavelength Waveguides On Silicon, O. Lopatiuk-Tirpak, J. Ma, S. Fathpour
Optical Transmission Properties Of C-Shaped Subwavelength Waveguides On Silicon, O. Lopatiuk-Tirpak, J. Ma, S. Fathpour
Faculty Bibliography 2010s
Optical properties of C-shaped subwavelength waveguides in metallic (silver) films on silicon substrates are studied in the range of 0.6-6 mu m. Power throughput and resonant wavelengths of several transmission modes are studied by varying the waveguide length (or metal thickness). Among three types of transmission modes, the fundamental order of the Fabry-Perot-type mode was shown to attain remarkably high power throughputs (as high as 12). With optimized design of the aperture, the resonant wavelength of this mode occurs in the 1-2 mu m wavelength range, suggesting that such apertures can be utilized to achieve plasmonic-enhanced silicon photonic devices at …
Synergistic Effect Of Carbon Nanofiber And Carbon Nanopaper On Shape Memory Polymer Composite, Haibao Lu, Yanju Liu, Jihua Gou, Jinsong Leng, Shanyi Du
Synergistic Effect Of Carbon Nanofiber And Carbon Nanopaper On Shape Memory Polymer Composite, Haibao Lu, Yanju Liu, Jihua Gou, Jinsong Leng, Shanyi Du
Faculty Bibliography 2010s
The present work studies the synergistic effect of carbon nanofiber (CNF) and carbon nanopaper on the shape recovery of shape memory polymer (SMP) composite. The combination of CNF and carbon nanopaper was used to improve the thermal and electrical conductivities of the SMP composite. The carbon nanopaper was coated on the surface of the SMP composite in order to achieve the actuation by electrical resistive heating. CNFs were blended with the SMP resin to improve the thermal conductivity to facilitate the heat transfer from the nanopaper to the underlying SMP composite to accelerate the electroactive responses.
Superelastic Response Of 111 And 101 Oriented Niti Micropillars, R. M. Manjeri, S. Qiu, N. Mara, A. Misra, R. Vaidyanathan
Superelastic Response Of 111 And 101 Oriented Niti Micropillars, R. M. Manjeri, S. Qiu, N. Mara, A. Misra, R. Vaidyanathan
Faculty Bibliography 2010s
A combination of microcompression experiments on single crystal micron-scaled pillars of NiTi of known orientations and in situ neutron diffraction during loading of the same NiTi but in bulk, polycrystalline form are carried out to understand the stress-induced transformation associated with superelasticity at reduced length scales. At the length scales investigated, there is evidence through this work of a fully reversible stress-induced transformation from B2 to B19' NiTi that does not involve additional dislocation activity or irrecoverable strains. The orientation dependence of the elastic deformation of the 82 phase, the onset of its transformation to the B19' phase, the gradient …
Deep-Ultraviolet Photodetectors From Epitaxially Grown Nixmg1-Xo, J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, W. V. Schoenfeld
Deep-Ultraviolet Photodetectors From Epitaxially Grown Nixmg1-Xo, J. W. Mares, R. C. Boutwell, M. Wei, A. Scheurer, W. V. Schoenfeld
Faculty Bibliography 2010s
Deep-ultraviolet (DUV) photodetectors were fabricated from high quality NixMg1-xO epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO < 100 > substrate. A mid-range Ni composition (x=0.54) NixMg1-xO film was grown for DUV (lambda(peak) < 300 nm) photoresponse and the film was characterized by reflected high-energy electron diffraction, Rutherford backscattering spectroscopy, x-ray diffraction, and optical transmission measurements. Photoconductive detectors were then fabricated by deposition of symmetric interdigitated contacts (10 nm Pt/150 nm Au) with contact separations of 5, 10, and 15 mu m. The detectors exhibited peak responsivities in the DUV (lambda(peak) approximate to 250 nm) as high as 12 mA/W, low dark currents (I-dark < 25 nA), and DUV:visible ejection ratio of approximately 800:1.
Temperature Dependence Of Plasmonic Terahertz Absorption In Grating-Gate Gallium-Nitride Transistor Structures, A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, M. S. Shur
Temperature Dependence Of Plasmonic Terahertz Absorption In Grating-Gate Gallium-Nitride Transistor Structures, A. V. Muravjov, D. B. Veksler, V. V. Popov, O. V. Polischuk, N. Pala, X. Hu, R. Gaska, H. Saxena, R. E. Peale, M. S. Shur
Faculty Bibliography 2010s
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.
Reconstruction Of Planar Conductivities In Subdomains From Incomplete Data, Adrian Nachman, Alexandru Tamasan, Alexandre Timonov
Reconstruction Of Planar Conductivities In Subdomains From Incomplete Data, Adrian Nachman, Alexandru Tamasan, Alexandre Timonov
Faculty Bibliography 2010s
We consider the problem of recovering a sufficiently smooth isotropic conductivity from interior knowledge of the magnitude of the current density field vertical bar J vertical bar generated by an imposed voltage potential f on the boundary. In any dimension n > = 2, we show that equipotential sets are global area minimizers in the conformal metric determined by vertical bar J vertical bar. In two dimensions, assuming the boundary voltage is almost two-to-one, we prove uniqueness of the minimization problem. This yields two results on reconstruction from incomplete data. In the first case, vertical bar J vertical bar is known …
Triple-Junction Contribution To Diffusion In Nanocrystalline Si, A. Portavoce, L. Chow, J. Bernardini
Triple-Junction Contribution To Diffusion In Nanocrystalline Si, A. Portavoce, L. Chow, J. Bernardini
Faculty Bibliography 2010s
The influence of triple-junctions on experimental Ge diffusion profiles (850-1000 degrees C) in nanocrystalline Si is investigated using three-dimensional finite element simulations. We found that triple-junction diffusion is not negligible in nanocrystalline Si made of 40 nm wide grains. Ge triple-junction diffusion coefficient follows the Arrhenius law 5.72x10(4) exp(-3.24 eV/kT)cm(2) s(-1). It is approximately 4.7x10(2) times higher than grain boundary diffusion coefficient, even though diffusion in triple-junction and in grain boundary exhibits similar activation energy.
Prospects Of Emerging Polymer-Stabilized Blue-Phase Liquid-Crystal Displays, Linghui Rao, Jin Yan, Shin-Tson Wu
Prospects Of Emerging Polymer-Stabilized Blue-Phase Liquid-Crystal Displays, Linghui Rao, Jin Yan, Shin-Tson Wu
Faculty Bibliography 2010s
The prospects of emerging polymer-stabilized blue-phase liquid-crystal displays, or more generally, Kerr-effect-induced isotropic-to-anisotropic transition, are analyzed with special emphases on the temperature effects. As the temperature increases, both the Kerr constant, induced birefringence, and response time decrease but at different rates. The proposed physical models fit well with experimental results. Some remaining technical challenges associated with this promising display technology are discussed.
Photonic Circuits For Generating Modal, Spectral, And Polarization Entanglement, Mohammed F. Saleh, Giovanni Di Giuseppe, Bahaa E. A. Saleh, Malvin Carl Teich
Photonic Circuits For Generating Modal, Spectral, And Polarization Entanglement, Mohammed F. Saleh, Giovanni Di Giuseppe, Bahaa E. A. Saleh, Malvin Carl Teich
Faculty Bibliography 2010s
We consider the design of photonic circuits that make use of Ti:LiNbO(3) diffused channel waveguides to generate photons with various combinations of modal, spectral, and polarization entanglement. Down-converted photon pairs are generated via spontaneous parametric down-conversion (SPDC) in a two-mode waveguide (TMW). We study a class of photonic circuits comprising: 1) a nonlinear periodically poled TMW structure; 2) a set of single-mode waveguide (SMW)- and TMW-based couplers arranged in such a way that they suitably separate the three photons comprising the SPDC process; and, for some applications, 3) a holographic Bragg grating that acts as a dichroic reflector. The first …
Determination Of Optimum Si Excess Concentration In Er-Doped Si-Rich Sio2 For Optical Amplification At 1.54 Mu M, Oleksandr Savchyn, Kevin R. Coffey, Pieter G. Kik
Determination Of Optimum Si Excess Concentration In Er-Doped Si-Rich Sio2 For Optical Amplification At 1.54 Mu M, Oleksandr Savchyn, Kevin R. Coffey, Pieter G. Kik
Faculty Bibliography 2010s
The presence of indirect Er3+ excitation in Si-rich SiO2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be similar to 14.5 at. % for samples without Si nanocrystals (annealed at 600 degrees C) and similar to 11.5 at. % for samples with Si nanocrystals (annealed at 1100 degrees C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is …
An Empirical Potential For Silicon Under Conditions Of Strong Electronic Excitation, Lalit Shokeen, Patrick K. Schelling
An Empirical Potential For Silicon Under Conditions Of Strong Electronic Excitation, Lalit Shokeen, Patrick K. Schelling
Faculty Bibliography 2010s
We present an empirical potential developed for silicon under conditions of strong electronic excitation. We show the essentially athermal nature of the melting transition when the electronic temperature is extremely high. The resulting liquid is shown to be distinct from ordinary liquid silicon. For less intense excitations, we determine the thermal melting temperature and demonstrate the possible existence of a regime where ordinary thermodynamic melting can occur but at a reduced temperature T(m). We show laser-induced softening of the lattice can lead to lattice cooling for very short time scales (similar to 100 fs), an effect never before recognized.
High Quality Solution Processed Carbon Nanotube Transistors Assembled By Dielectrophoresis, Paul Stokes, Saiful I. Khondaker
High Quality Solution Processed Carbon Nanotube Transistors Assembled By Dielectrophoresis, Paul Stokes, Saiful I. Khondaker
Faculty Bibliography 2010s
We report on high quality individual solution processed single-walled carbon nanotube (SWNT) field effect transistors assembled from a commercial surfactant free solution via dielectrophoresis. The devices show field effect mobilities up to 1380 cm(2)/V s and on-state conductance up to 6 mu S. The mobility values are an order of magnitude improvement over previous solution processed SWNT devices and close to the theoretical limit. These results demonstrate that high quality SWNT devices can be obtained from solution processing and will have significant impact in high yield fabrication of SWNT nanoelectronic devices.