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Graphitized Carbon On Gaas(100) Substrates, J. Simon, P. J. Simmonds, J. M. Woodall, M. L. Lee

Paul J. Simmonds

We report on the formation of graphitized carbon on GaAs(100) surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for sp²-bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5–3 nm in size and demonstrate that crystallite domain size can be increased through the use of higher etch temperatures.