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The Effects Of Snagcu Solder Interconnect Package’S Parameters On Electromigration Failure Mechanisms, Yi Ram Kim

Material Science and Engineering Dissertations

The primary concern of this dissertation is the electromigration (EM) failure mechanism found in Sn-Ag-Cu (SAC) solder alloys integrated in WCSP (wafer-level chip scale package) packaging structure and factors affecting the failure mechanisms. To the end, accelerated electromigration (EM) tests are conducted on SnAgCu (SAC) solder interconnects in wafer-level chip scale packages (WCSPs or WLCSPs) with different package structures and use-condition parameters. The package structure parameters include different under bump metallization (UBM) thicknesses, Sn grain orientation, while the various in use conditions includes pulsed direct current (DC), and alternating current (AC). The major findings made in the studies are presented …