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Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Faculty Publications
A high-throughput high-sensitivity optical technique for measuringmagnetostriction of thin-film composition-spread samples has been developed. It determines the magnetostriction by measuring the induced deflection of micromachined cantilever unimorph samples. Magnetostrictionmeasurements have been performed on as-deposited Fe–Ga and Fe–Ga–Al thin-film composition spreads. The thin-film Fe–Ga spreads display a similar compositional variation of magnetostriction as bulk. A previously undiscovered peak in magnetostriction at low Ga content was also observed and attributed to a maximum in the magnetocrystalline anisotropy. Magnetostrictive mapping of the Fe–Ga–Al ternary system reveals the possibility of substituting up to 8at.%Al in Fe70Ga30 without significant degradation of magnetostriction.
Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications
The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.
Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications
In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Faculty Publications
Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain …
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Faculty Publications
Alfilmsdeposited on sputtered‐TiN/Si substrate by metalorganic chemical vapor deposition(MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x‐ray diffraction(XRD),Auger electron spectroscopy(AES),atomic force microscopy(AFM), and transmission electron microscopy (TEM). The TiN filmsputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of …