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A Material System For Reliable Low Voltage Anodic Electrowetting, Mehdi Khodayari, Jose Carballo, Nathan B. Crane
A Material System For Reliable Low Voltage Anodic Electrowetting, Mehdi Khodayari, Jose Carballo, Nathan B. Crane
Faculty Publications
Electrowetting on dielectric is demonstrated with a thin spin-coated fluoropolymer over an aluminum electrode. Previous efforts to use thin spin-coated dielectric layers for electrowetting have shown limited success due to defects in the layers. However, when used with a citric acid electrolyte and anodic voltages, repeatable droplet actuation is achieved for 5000 cycles with an actuation of just 10 V. This offers the potential for low voltage electrowetting systems that can be manufactured with a simple low-cost process.
Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Combinatorial Investigation Of Magnetostriction In Fe-Fa And Fe-Ga-Al, Jason R. Hattrick-Simpers, Dwight Hunter, Corneliu M. Craciunescu, Kyu Sung Jang, Makoto Murakami, James Cullen, Manfred Wuttig, Ichiro Takeuchi, Samuel E. Lofland, Leonid Bendersky, Noble Woo, Robert Bruce Vandover, Toshiya Takahashi, Yasubumi Furuya
Faculty Publications
A high-throughput high-sensitivity optical technique for measuringmagnetostriction of thin-film composition-spread samples has been developed. It determines the magnetostriction by measuring the induced deflection of micromachined cantilever unimorph samples. Magnetostrictionmeasurements have been performed on as-deposited Fe–Ga and Fe–Ga–Al thin-film composition spreads. The thin-film Fe–Ga spreads display a similar compositional variation of magnetostriction as bulk. A previously undiscovered peak in magnetostriction at low Ga content was also observed and attributed to a maximum in the magnetocrystalline anisotropy. Magnetostrictive mapping of the Fe–Ga–Al ternary system reveals the possibility of substituting up to 8at.%Al in Fe70Ga30 without significant degradation of magnetostriction.
Grain Boundary Property Determination Through Measurement Of Triple Junction Geometry And Crystallography, Brent L. Adams, D. Casasent, M. Demirel, Bassem S. El-Dasher, D. Kinderlehrer, C. Liu, I. Livshits, F. Manolache, D. Mason, A. Morawiec, W. W. Mullins, S. Ozdemir, Gregory S. Rohrer, Anthony D. Rollett, David M. Saylor, Shlomo Ta'asan, A. Talukder, Chialin T. Wu, C. C. Yang, W. Yang
Grain Boundary Property Determination Through Measurement Of Triple Junction Geometry And Crystallography, Brent L. Adams, D. Casasent, M. Demirel, Bassem S. El-Dasher, D. Kinderlehrer, C. Liu, I. Livshits, F. Manolache, D. Mason, A. Morawiec, W. W. Mullins, S. Ozdemir, Gregory S. Rohrer, Anthony D. Rollett, David M. Saylor, Shlomo Ta'asan, A. Talukder, Chialin T. Wu, C. C. Yang, W. Yang
Faculty Publications
This work was supported primarily by the MRSEC program of the National Science Foundation under Award Number DMR-0079996. Microstructure controls the properties of most useful materials. Thus an ability to control microstructure through the processing of materials is a key to optimization of materials performance. Most materials are polycrystalline and their grain structure is a very important aspect of their microstructure. Thanks to their complexity there is a great variety of grain boundary types even in relatively isotropic materials such as the cubic metals. Simply describing the crystallography requires five (macroscopic) parameters (e.g. disorientation and inclination). Evidently, acquiring a knowledge …
Microstructure Design Of A Two Phase Composite Using Two-Point Correlation Functions, Brent L. Adams, H. Garmestani, G. Saheli
Microstructure Design Of A Two Phase Composite Using Two-Point Correlation Functions, Brent L. Adams, H. Garmestani, G. Saheli
Faculty Publications
This work has been funded under the AFOSR Grant no. F49620-03-1-0011 and Army Research Lab contract no. DAAD17-02-P-0398 and DAAD 19-01-1-0742. Two-point distribution functions are used here as to introduce "Microstructure Sensitive Design" in two-phase composites. Statistical distribution functions are commonly used for the representation of microstructures and also for homogenization of materials properties. The use of two-point statistics allows the composite designer to include the morphology and distribution in addition to the properties of the individual phases and components. Statistical continuum mechanics is used to make a direct link between the microstructure and properties (elastic and plastic) in terms …
Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications
The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.
Advances In Experimental Method And Analysis For Estimation Of Geometrically-Necessary Dislocations, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Advances In Experimental Method And Analysis For Estimation Of Geometrically-Necessary Dislocations, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Faculty Publications
The authors wish to thank The Alcoa Technical Research Center for supplying the specimens and performing the compression tests. This work was supported by the MRSEC program of the National Science Foundation under DMR-0079996 as well as Lawrence Livermore Laboratory DOE/DoD Joint Program. An behavior of grain boundaries of the polycrystalline materials over a wide range of length scales during plastic deformation is considered. Electron backscattering diffraction and orientation imaging microscopy provide automated scanning measurements of the lattice orientation near grain boundaries. These methods are useful to set the necessary length scales. The data are presented for directionally-solidified pure Al …
Viewpoint: Experimental Recovery Of Geometrically Necessary Dislocation Density In Polycrystals, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Viewpoint: Experimental Recovery Of Geometrically Necessary Dislocation Density In Polycrystals, Brent L. Adams, Bassem S. El-Dasher, Anthony D. Rollett
Faculty Publications
The authors wish to thank The Alcoa Technical Research Center for supplying the specimens and performing the compression tests. This work was supported primarily by the MRSEC program of the National Science Foundation under DMR-0079996. Application of electron backscattering diffraction methods to recover estimates of the geometrically necessary dislocation density is described. The limitations of the method arising from the opacity of crystalline materials and the spatial and angular resolution limits are discussed.
Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications
In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Microstructure And Deposition Rate Of Aluminum Thin Films From Chemical Vapor Deposition With Dimethylethylamine Alane, Byoung-Youp Kim, Xiaodong Li, Shi-Woo Rhee
Faculty Publications
Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain …
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Structural Characterization Of Aluminum Films Deposited On Sputtered-Titanium Nitride/ Silicon Substrate By Metalorganic Chemical Vapor Deposition From Dimethylethylamine Alane, Xiaodong Li, Byoung-Youp Kim, Shi-Woo Rhee
Faculty Publications
Alfilmsdeposited on sputtered‐TiN/Si substrate by metalorganic chemical vapor deposition(MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x‐ray diffraction(XRD),Auger electron spectroscopy(AES),atomic force microscopy(AFM), and transmission electron microscopy (TEM). The TiN filmsputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of …