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Articles 1 - 15 of 15
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Development Of A Bilayer Metallization For Rit's Existing Cmos Process, Anthony Nguyen
Development Of A Bilayer Metallization For Rit's Existing Cmos Process, Anthony Nguyen
Journal of the Microelectronic Engineering Conference
The design and fabrication of a two-level subtractive aluminum metal backend was completed at the Rochester Institute of Technology. Metall-Metal2 (M1-M2) via chains were used as electrical test structures and tested operational. The optimal process uses 4000A of LTO for an ILD, a non-heated metal2 aluminum sputter deposition, and a chlorine-based plasma for metal etch. Resistance measurements taken through via chains produced values of —400Ω. While an ideal aluminum bar of the via chain’s dimensions should have a resistance of —100Ω, a contact resistance exists at each via throughout the chain and increases the resistance value. Capacitors were also electrically …
Junction Integrity For Low Temperature Dopant Activation In Silicon, Geoff E. Watson
Junction Integrity For Low Temperature Dopant Activation In Silicon, Geoff E. Watson
Journal of the Microelectronic Engineering Conference
Detailed within this paper is investigation of using low temperature processes to activate dopant in silicon. Parameters studied include breakdown voltage, turn-on voltage, leakage current, and ideality factor. Strong correlation was seen between the temperature of activation and both the ideality factor and leakage current. Breakdown voltage seemed constant except for the highest temperature processing. Turn-on voltage seemed to change for boron activation, but not for phosphorus activation
Formation Of Self-Aligned Shallow Junction Mosfet Source/Drains By Proximity Rapid Thermal Diffusion, Scott W. Kenny
Formation Of Self-Aligned Shallow Junction Mosfet Source/Drains By Proximity Rapid Thermal Diffusion, Scott W. Kenny
Journal of the Microelectronic Engineering Conference
The creation of short-channel length MOSFET's requires shallow junctions and thin gate dielectrics to maintain long channel behavior. The Focus of this paper is the creation of shallow source/drain junctions by Proximity Diffusion with Rpid Thermal Processing (RTP_. PMOS devices were fabricated using Borofilm 100 Spin on Dopant with temperatures pf 950° and 1000° for 10 and 20 seconds ramped at 30 degrees per second. The source and drain regions are defined by the patterned polysilicon gate, which is also doped during this process. A 100 A gate oxide is used, incorporating nitrogen to reduce boron diffusion through the gate. …
Fabrication And Test Characterization Of Organic Poly(3,"' Diallkylquaterthiophene) (Pqt-12) Transistors, Amy Huang
Journal of the Microelectronic Engineering Conference
Organic thin film transistors (OTFTs) are fabricated as bottom gate, top contact devices unlike conventional integrated circuits. Transistors of various dimensions with a top organic polymer layer that acts as a semiconductor known as poly(3,3” dialkylquater thiophene) (PQT-12) have been fabricated and electrically tested. Two processes have been designed prior to spin coating the PQT polymer: a) four heavily doped boron wafers using the back of the wafer as a gate with aluminum and chrome source/drain metal options and b) five moderately doped boron wafers with molybdenum or chrome gates with aluminum or molyb denum source/drains. The devices fabricated on …
Solutions To Resist Pattern Collapse For 45nm Lithography, Jonathan Reese
Solutions To Resist Pattern Collapse For 45nm Lithography, Jonathan Reese
Journal of the Microelectronic Engineering Conference
Two approaches to prevent pattern collapse of 45 nm photoresist features were explored to create a process which minimizes the forces attributed to collapse while increasing adhesion forces. Two different bottom anti-reflective coatings (BARC), a first and second reflectance minimum were examined in conjunction with the experimental approaches. An initial characterization of pattern collapse was performed to act as a control to gauge the effectiveness of the experimental approaches using an exposure matrix. The first approach implemented a surfactant added to the de-ionized (DI) water rinse after develop to decrease the capillary forces between the features. The second approach created …
Fabrication Of Eight Level Micro-Lenses, Mayank Agrawal
Fabrication Of Eight Level Micro-Lenses, Mayank Agrawal
Journal of the Microelectronic Engineering Conference
As imaging and photonics technology is advancing to smaller and complex devices there is increasing interest in applications that make use of small micro-level optical elements such as micro-lenses. Micro-lens fabrication is useful in developing diffractive optical elements (DOE’s) that are used in optical communication, optical storage, optical interconnection, optical information processing and micro-optical sensors. Another area where micro-lens fabrication can be used is in characterization and optimization of illuminating sources of lithographic projection systems. The objective of this project was to fabricate eight level micro-lenses on a 5”X5” quartz substrate designed for the 193nm exposing wavelength. A micro-lens is …
Workfunction Tuning Of Molybdenum Gate By Nitrogen Incorporation (May 2006), Kazuya Tokunaga
Workfunction Tuning Of Molybdenum Gate By Nitrogen Incorporation (May 2006), Kazuya Tokunaga
Journal of the Microelectronic Engineering Conference
Due to the aggressive scaling of CMOS devices, it is necessary to provide a metal gate solution to replace the conventional process known as a self-aligned poly-silicon gate. Molybdenum (Mo) possesses several properties that make it attractive as a CMOS gate electrode material. In addition, Mo has been identified as a candidate for “single-metal / dual workfunction” technology, with the ability to tune the workfunction by the introduction of nitrogen. In this study, the correlation between workfunction of the Mo gate and the incorporation of nitrogen was investigated. The flat-band voltage shift was extracted from the obtained C-V Characteristic curves. …
Biomems Wireless Pressure Sensor, Daniel V. Pearce
Biomems Wireless Pressure Sensor, Daniel V. Pearce
Journal of the Microelectronic Engineering Conference
A design and manufacture of a wireless pressure sensor was proposed as a future tool for use in biological monitoring. This device is designed to acquire pressure changes through a change in capacitance. This is accomplished using a large circular parallel plate capacitor separated by a micron of air. The upper and lower plates are connected together via a large planar inductor on the opposite end of the device. The inductor and capacitor in a parallel form a resonant circuit with resonant frequency equal to one over the square root of inductance times capacitance. The resonant frequency can be dependent …
End Point Detection Of Plasma Etching Using Optical Methods, Jeff M. Czebiniak
End Point Detection Of Plasma Etching Using Optical Methods, Jeff M. Czebiniak
Journal of the Microelectronic Engineering Conference
The objective of this experiment is to obtain an endpoint detection unit that can be used on all plasma etch tools in the Semiconductor and Microsystems Fabrication Laboratory (SMFL). This investigation examined one of the most common methods for end point detection in plasma etching; optical emission spectroscopy. Optical emission spectroscopy involves monitoring the wavelength emission intensity of the plasma of different species within the etchant plasma. From all of the data collected in this experiment it was shown that the Ocean Optics Spectrometer can be utilized for end point detection on any toolset in the SMFL.
Alignment In Electron Beam Lithography, Stoyan J. Jeliazkov
Alignment In Electron Beam Lithography, Stoyan J. Jeliazkov
Journal of the Microelectronic Engineering Conference
Alignment was accomplished as the ultimate goal in the development of an electron beam lithography process. System was based on LEO EVO 50 scanning electron microscope at RIT’s Semiconductor and Microsystems Fabrication Laboratory (SMFL) with external writing control software package NPGS v 9.0.160. Preliminary work included investigation of line- and area-pattern writing in negative tone AZ nLOF 2020 resist diluted 1:2 with PGMEA and pattern transfer into silicon substrate via plasma etch. Manual alignment with ±100 nm translational accuracy across a 100 μm writing field was demonstrated.
Development And Characterization Of A Rie Process For Anisotropic Trenches In Silicon, Dan R. Ghiocel
Development And Characterization Of A Rie Process For Anisotropic Trenches In Silicon, Dan R. Ghiocel
Journal of the Microelectronic Engineering Conference
Reactive Ion Etching (RIE) is an important process widely used in the fabrication of micro-electro mechanical-systems (MEMS) especially for microfluidic channels. The purpose of this investigation was to develop a process for anisotropic trenches in silicon using the Drytek Quad reactive ion etching system available at the Semiconductor and Microsystems Fabrication Laboratory at Rochester Institute of Technology. The etch profiles were analyzed using Scanning Electron Microscopy (SEM) and the aspect ratio dependent etching (ARDE) effect, and the etch anisotropy were characterized. At the end, this investigation demonstrated highly anisotropic trenches etched in silicon. A baseline process for etching anisotropic trenches …
Rostir, Inc.: The Fabrication Of Ultra High Value Chip Resistors & Business Plan Development, Jonathan E. Ross
Rostir, Inc.: The Fabrication Of Ultra High Value Chip Resistors & Business Plan Development, Jonathan E. Ross
Journal of the Microelectronic Engineering Conference
The concept of this project was comprised of a proof of concept design with an additional focus on entrepreneurship. To define clearly, this project included the selection of a device to fabricate, where a commercial market opportunity existed, using semiconductor technologies while simultaneously developing a business plan marketed towards further funding. This project required complete design of the Ultra High Value Chip Resistor as well as a process design for fabrication of the resistors. Gigaohm resistance values were achieved and varied with a range between 60- ]6OGohms, with an average of 99.5 Gigaohms, the expected value was 86.6 Gigaohms. Some …
Microfabrication And Commercialization Of A Polymer-Absorption Chemical Gas Sensor, Stephen P. Parshall
Microfabrication And Commercialization Of A Polymer-Absorption Chemical Gas Sensor, Stephen P. Parshall
Journal of the Microelectronic Engineering Conference
A polymer-absorption chemical gas sensor has been microfabricated and tested to discriminate varying concentrations of ethanol vapors. The polymer, PEDOT (3,4- polyethylenedioxythiopene-polystyrenesulfonate) was combined with carbon to function as the sensing device. The sensor demonstrated well-defined responses to the smallest tested ethanol concentrations of 0.1 μl (185 ppm) and is expected to be accurate to much smaller ppm levels. When packed with the proposed external feedback network, the device may be suitable for field-breath alcohol level detection as an alternative to expensive fuel-cell and chromatography based devices. The proposed device will be portable, user friendly and inexpensive to operate.
Investigation Into The Use Of Su8 In High Aspect Ratio Applications, Kody Okafor
Investigation Into The Use Of Su8 In High Aspect Ratio Applications, Kody Okafor
Journal of the Microelectronic Engineering Conference
The objective for this project was to investigate the feasibility of making high aspect ratio SU8 structures via contact lithography with a target of 10:1 and line width resolution of about 2μm. Factors investigated include exposure dose of 150mJ/cm2, 200mJ/cm2, 250mJ/cm2 and PEB times of 1.5mm, 3mm and 4.5mm. The responses were line width CD and sidewall angle. The approach was first to optimize the thickness of the resist coated. This was done by generating a spin speed curve for the SU8 formulation used. Secondly, was to optimize the line width CD. A 32 full factorial experiment was performed. From …
Microfabrication Of Biocompatible Stimulation Electrode Arrays For Cochlear Implants, Ward A. Johnson
Microfabrication Of Biocompatible Stimulation Electrode Arrays For Cochlear Implants, Ward A. Johnson
Journal of the Microelectronic Engineering Conference
A proof of concept to microfabricate an electrode array suitable for use with cochlear implants was successfully manufactured and tested. Thirty microns of photoimageable polyimide was used as a flexible substrate. The array was inserted 20mm into an artificial cochlea filled with a saline and soap solution that simulates intracochlear fluid and hyaluronic acid (used as a lubricant), which is comparable to the performance of current manufactured products.