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Optics Commons

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Electromagnetics and Photonics

University of Central Florida

Molecular beam epitaxy

Publication Year

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Full-Text Articles in Optics

Growth And Characterization Of Zno Based Semiconductor Materials And Devices, Ming Wei Jan 2013

Growth And Characterization Of Zno Based Semiconductor Materials And Devices, Ming Wei

Electronic Theses and Dissertations

Wide band gap semiconductors such as MgxZn1-xO represent an excellent choice for making optical photodetectors and emitters operating in the UV spectral region. High crystal and optical quality MgxZn1-xO thin films were grown epitaxially on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy. ZnO thin films with high crystalline quality, low defect and dislocation densities, and sub-nanometer surface roughness were achieved by applying a low temperature nucleation layer. The critical growth conditions were discussed to obtain a high quality film: the sequence of Zn and O sources for initial growth of nucleation layer, growth temperatures for both ZnO nucleation and …


Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors, Jeremy Mares Jan 2010

Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors, Jeremy Mares

Electronic Theses and Dissertations

In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films NixMg1-xO and ZnxMg1-xO and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited - and possibly even juxtaposed - to realize novel wide band gap optoelectronic technologies. The …