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Full-Text Articles in Engineering Physics
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Jeffrey Dyck
We report on magnetic and electrical transport properties of Sb2-x Crx Te3 single crystals with 0⩽x⩽0.095 over temperatures from 2 K to 300 K . A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x>0.014 ), attaining a maximum value of 20 K for x=0.095 . Hysteresis below TC for the applied field parallel to the c axis is observed in both magnetization and Hall-effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3 d3 ) valence state, substituting for antimony in the host …
Synthesis, Crystal Structure And Thermoelectric Properties Of Β-K2bi8se13 Solid Solutions, Theodora Kyratsi, Duck-Young Chung, Jeff Dyck, Ctirad Uher, Sangeeta Lal, Sim Loo, Tim Hogan, John Ireland, Carl Kannewurf, Evripides Hatzikraniotis, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Synthesis, Crystal Structure And Thermoelectric Properties Of Β-K2bi8se13 Solid Solutions, Theodora Kyratsi, Duck-Young Chung, Jeff Dyck, Ctirad Uher, Sangeeta Lal, Sim Loo, Tim Hogan, John Ireland, Carl Kannewurf, Evripides Hatzikraniotis, Konstantinos Paraskevopoulos, Mercouri Kanatzidis
Jeffrey Dyck
Solid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The …
Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Jeffrey Dyck
A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during thermoelectric film deposition is desired, it has been limited by the degradation of the photoresist used for patterning. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films are reported, and preliminary results show that excess tellurium increases the Seebeck …
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Jeffrey Dyck
Titanium-doped single crystals (cTi = 0 to 2×1020 atoms cm-3) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of …
Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Electrical Conductivity And Thermopower Of Cu–Sio[Sub 2] Nanogranular Films., W. Chen, J. Lin, X. Zhang, H. Shin, Jeffrey Dyck, C. Uher
Jeffrey Dyck
We have measured the thermopower S and electrical conductivity σ in a series of Cu[sub x](SiO[sub 2])[sub 1-x] nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ √T to σ∝ T[sup 1/3] is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.
Anomalous Barium Filling Fraction And N-Type Thermoelectric Performance Of Ba[Sub Y]Co[Sub 4]Sb[Sub 12]., L. Chen, T. Kawahara, X. Tang, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Anomalous Barium Filling Fraction And N-Type Thermoelectric Performance Of Ba[Sub Y]Co[Sub 4]Sb[Sub 12]., L. Chen, T. Kawahara, X. Tang, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Barium-filled skutterudites BaCoSb with an anomalously large filling fraction of up to y=0.44 have been synthesized. The lattice parameters increase linearly with Ba content. Magnetic susceptibility data show that BaCoSb is paramagnetic, which implies that some of the Co atoms in BaCoSb have acquired a magnetic moment. The presence of the two different valence states of Co (Co3+ and Co2+) leads to the anomalously large barium filling fraction even without extra charge compensation. All samples show n-type conduction. The electrical conductivity increases with increasing the Ba filling fraction. The lattice thermal conductivity of BaCoSb is significantly depressed as compared to …
Low Temperature Thermoelectric Properties Of Ni Doped N-Type Filled Skutterudites Ba0.3co4sb12 ., W. Chen, Jeffrey Dyck, C. Uher, L. Chen, X. Tang, T. Hirai
Low Temperature Thermoelectric Properties Of Ni Doped N-Type Filled Skutterudites Ba0.3co4sb12 ., W. Chen, Jeffrey Dyck, C. Uher, L. Chen, X. Tang, T. Hirai
Jeffrey Dyck
n-type Ba filled skutterudites doped with Ni, Ba0.3Ni xCo4-xSb12 with 0⩽x⩽0.2, have been synthesized and the Seebeck coefficient, thermal conductivity, electrical resistivity and Hall coefficient have been measured. ZT of 1.2 has been achieved at 800 K with x=0.05. The thermal conductivity data are fitted and the rattling effect of the Ba atoms is identified through a resonance scattering term. The Hall mobility is studied and a mixed scattering mechanism of acoustic phonons and ionized impurities based on a single, rigid band picture is presented. The role of Ni atoms in enhancing the thermoelectric performance is discussed
Multi-Filling Approach For The Improvement Of Thermoelectric Properties Of Skutterudites., L. Chen, X. Tang, T. Kawahara, Jeffrey Dyck
Multi-Filling Approach For The Improvement Of Thermoelectric Properties Of Skutterudites., L. Chen, X. Tang, T. Kawahara, Jeffrey Dyck
Jeffrey Dyck
Several skutterudite antimonides filled with atoms of different kinds, (Ba, M)yCo4Sb12 (M=Ce, La, Sr), have been synthesized by the combination of solid state reaction and melting methods. Thermal conductivity of (Ba,Sr)yCo4 Sb12 samples shows a behavior similar to that of BayCo4Sb12. Adding a small amount of Ce or La to the BayCo4Sb12 system is effective in further reducing the lattice thermal conductivity. The difference in the ionic radii of the two co-filler atoms is the most sensitive factor for scattering of phonons. The multi-filled (Ba, M)yCo4Sb12 (M=Sr, Ce, La) show lower Seebeck coefficients as compared to the single-filled BayCo 4Sb12 …
High-Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Zhang, R. Yuan, L. Chen, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
High-Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Zhang, R. Yuan, L. Chen, T. Goto, T. Hirai, Jeffrey Dyck, W. Chen, C. Uher
Jeffrey Dyck
Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type BayNixCo4-xSb12 (x = 0-0.1, y = 0.-0.4) were investigated at temperature range of 300 to 900 K. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When y was fixed at 0.3, thermal conductivity decreased with increasing Ni content and reached a minimum value at about x = 0.05. Lattice thermal conductivity decreased with increasing Ni content, monotonously (y ≤ 0.1). Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature and decreased with increasing …
Synthesis And High Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Chen, T. Goto, Jeffrey Dyck
Synthesis And High Temperature Thermoelectric Properties Of N-Type Baynixco4-Xsb12., X. Tang, L. Chen, T. Goto, Jeffrey Dyck
Jeffrey Dyck
Single-phase filled skutterudite compounds BayNx Co4-xSb12 (x=0-0.1, y=0-0.4) were synthesized by a two-step solid state reaction. Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type Ba yNixCo4-xSb12 were investigated. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When barium filling fraction (y) was fixed at 0.3, the thermal conductivity decreased with increasing Ni content, and reached a minimum value at about x=0.05. Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature, and decreased with increasing Ba filling fraction and Ni content. A …
Thermoelectric Properties Of Yb-Filled And Sn-Compensated Skutterudites ., Jihui Yang, Gregory Meisner, Wei Chen, Jeffrey Dyck, Ctirad Uher
Thermoelectric Properties Of Yb-Filled And Sn-Compensated Skutterudites ., Jihui Yang, Gregory Meisner, Wei Chen, Jeffrey Dyck, Ctirad Uher
Jeffrey Dyck
The effect of alloying tin on the antimony site of ytterbium-filled skutterudites is examined. We performed measurements of Hall effect, electrical resistivity, Seebeck coefficient and thermal conductivity on the series Yb0.5Co4Sb12-x Snx, with x=0.5, 0.6, 0.8 and 0.83. We find that the substitution of tin does not alter the position of the Fermi level with respect to the conduction band of these heavily doped semiconducting samples, but rather it gives rise to a p-type band. Experimental data for x=0.83 can be understood in the context of a two-carrier electrical conduction. Thermal conductivity of these ytterbium-filled skutterudites is significantly suppressed with …
Transport And Magnetic Properties Of Co1-Xnixsb3 With X Less Than 0.01, Jeffrey Dyck, W. Chen, Y. Yang, G. Meisner, C. Uher
Transport And Magnetic Properties Of Co1-Xnixsb3 With X Less Than 0.01, Jeffrey Dyck, W. Chen, Y. Yang, G. Meisner, C. Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite CoSb3 are currently being investigated for their potential application as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, because it has one more electron in its valence shell than Co. We present electrical resistivity, thermopower, Hall effect and magnetic susceptibility measurements on polycrystalline, n-type Co1-xNixSb3 with x less than 0.01. A model which takes into account conduction of electrons residing in the conduction band in addition to hopping conduction within an impurity "band" formed …
Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Synthesis Of Bulk Polycrystalline Indium Nitride At Subatmospheric Pressures., Jeffrey Dyck, K. Kash, C. Hayman, A. Argoitia, M. Grossner, J. Angus, W.-L. Zhou
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium with nitrogen from microwave plasma sources. The structure was confirmed by x-ray diffraction, electron diffraction, and elemental analysis. Two types of growth were observed: (i) dendritic crystals on the original melt surface, and (ii) hexagonal platelets adjacent to the In metal source on the upper edge of the crucible. The method does not involve a foreign substrate to initiate growth and is a potential alternative to the high-pressure techniques normally associated with bulk growth of indium nitride. The lattice parameters were a = 3.5366 ± 0.0005 angstrom and c = 5.7009 …
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Growth Of Oriented Thick Films Of Gallium Nitride From The Melt., Jeffrey Dyck, K. Kash, M. Grossner, C. Hayman, A. Argoitia, N. Yang, M.-H. Hong, M. Kordesch, J. Angus
Jeffrey Dyck
While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report …
Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Characteriation Of Bulk, Polycrystalline Indium Nitride Grown Of Subatmospheric Pressures, Jeffrey Dyck, Kathleen Kash, Kwieseon Kim, Walter Lambrecht, Cliff Hayman, Alberto Argoitia, Michael Grossner, Willie Zhou, John Angus
Jeffrey Dyck
Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron …
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk, polycrytalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photo-luminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystralline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitirde was formed in smaller amounts, was less well faceted, and showed no photoluminescence.