Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Keyword
-
- Diods structures (2)
- Laser (2)
- Shottky barers. (2)
- A solid solution (1)
- Acoustic wave (1)
-
- Acoustic wave velocity (1)
- Amorphous hydrogenated silicon (1)
- Analysis and estimation methods (1)
- Attenuation (1)
- Automation (1)
- Barrier (1)
- Beaufort scale and windmill. (1)
- Bismuth silicate crystals (1)
- Bunker (1)
- Calibration (1)
- Charge mobility (1)
- Composite (1)
- Computer simulation (1)
- Converter (1)
- Crushing device walnut (1)
- Cubic crystals (1)
- Current-voltage characteristic (1)
- Davis-Mott approximation (1)
- Deck (1)
- Defect absorption spectra (1)
- Deformation. (1)
- Density distribution of electron states of defects (1)
- Density distribution of electronic states in the allowed zones (1)
- Durability (1)
- Elastic anisotropy parameter (1)
Articles 1 - 14 of 14
Full-Text Articles in Physics
Features Of The Physical Properties Of The Modified Surface Of The P-Cdte – Znse Film Heterostructure With Deep Impurity Levels, Yuozas Y. Vaytkus, Nodir E. Alimov, Salim M. Otajonov
Features Of The Physical Properties Of The Modified Surface Of The P-Cdte – Znse Film Heterostructure With Deep Impurity Levels, Yuozas Y. Vaytkus, Nodir E. Alimov, Salim M. Otajonov
Scientific Bulletin. Physical and Mathematical Research
This article analyzes the spectrum of the photocurrent in a layered film heterostructure CdTe-ZnSe with deep primesnymi levels. The experimental results demonstrated that the heterostructure CdTe-ZnSe observed a new effect in the measurement of the photoconductivity spectra, depending on the direction of the applied electric field, and the applied field stimulates the emergence of photo-emf. The spectrum of the photocurrent in a layered CdTe- ZnSe heterostructure film with deep impurity levels are considered in the article. It follows from the experimental results that a new effect is observed in the CdTe-ZnSe heterostructure when measuring the photoconductivity spectra depending on the …
Definition Of Extended Structural Defects In Epitaxial Films Of Znteg‘Gaas Grown By Mbe, Muratbay B. Sharibaev, Kanatbay A. Ismailov, Ibrohim N. Karimov, Murodjon Z. Nosirov
Definition Of Extended Structural Defects In Epitaxial Films Of Znteg‘Gaas Grown By Mbe, Muratbay B. Sharibaev, Kanatbay A. Ismailov, Ibrohim N. Karimov, Murodjon Z. Nosirov
Scientific Bulletin. Physical and Mathematical Research
The last three decades of the development of solid state physics are characterized by the fact that the main objects of research are increasingly not massive crystals, but thin films, multilayer thin-film systems, conducting filaments and crystallites of small size. Epitaxial films are grown on a substrate of a single crystal of the same or another material. In the first case, the epitaxial layer with the correct technology becomes a natural extension of the substrate. Epitaxial film can be doped with various impurities. To introduce an alloying admixture into the epitaxial film, three methods are used. According to the first …
Spectral Characteristics Of The Absorption Coefficient And Energy Position Of Defects, Sirojiddin Z. Zaynobidinov, Rustamjon G. Ikramov, Mashhurahon A. Nuriddinova, Khurshid A. Muminov
Spectral Characteristics Of The Absorption Coefficient And Energy Position Of Defects, Sirojiddin Z. Zaynobidinov, Rustamjon G. Ikramov, Mashhurahon A. Nuriddinova, Khurshid A. Muminov
Scientific Bulletin. Physical and Mathematical Research
In this paper, a theoretical method to study the spectral characteristics of the absorption coefficient, namely the area of defective absorption of amorphous hydrogenated silicon according to the Davis-Mott approximation from the Kubo-Greenwood formula. It is shown that using the experimental spectral characteristic of the defect absorption coefficient, one can determine the energy position of defects in the mobility gap. Optical transitions of electrons, in which electronic states participate in defects, indicate that there are three types of optical transitions of electrons: between defects, between defects and tails of allowed zones, and also between defects and allowed zones. It was …
Sub-Barrier And Above-Barrier Electron Transport Through Multilayer Semiconductors, Vohob R. Rasulov, Rustam Y. Rasulov, Ikbol M. Eshboltaev, Ravshan R. Sultonov
Sub-Barrier And Above-Barrier Electron Transport Through Multilayer Semiconductors, Vohob R. Rasulov, Rustam Y. Rasulov, Ikbol M. Eshboltaev, Ravshan R. Sultonov
Scientific Bulletin. Physical and Mathematical Research
In the article the transparency coefficients of the semiconductor structure, consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure there should be an oscillation of the transmission coefficient of electrons depending on their energy, which is due to the interference of the de Broglie waves reaching the barrier and reflected from the potential barrier. The electronic states of a multilayer semiconductor structure consisting of alternating potential wells and barriers are analyzed. It has been shown that both in the above-barrier and in the barrier …
Scientific Foundation Of The Rate Of Falling Of Raw Materials On Walnut Breakage Device, Otabek A. Mirzaev, Xolhuzha A. Sobirov, Nusratillo R. Barakaev
Scientific Foundation Of The Rate Of Falling Of Raw Materials On Walnut Breakage Device, Otabek A. Mirzaev, Xolhuzha A. Sobirov, Nusratillo R. Barakaev
Scientific Bulletin. Physical and Mathematical Research
Today, there are many types of fruits that are separated the kernel from the shell: walnuts, almonds, filberts, chestnuts, pistachios and cashews. Nuts have a high calorific value and a rich nutrient composition. The most critical and delicate operation is shell cracking to extract the fragile whole kernel from the shell. Studies on nut rupturing are particularly focused on the following three aspects: the physical characteristics of nuts, the mechanical properties of nut rupturing, and nut rupturing equipment. Determining the velocity of the nut entered into the apparatus will allow the machine to operate normally, but will also increase its …
Studies Of Tribotechnical Properties Of Composite Polymeric Materials Of Machine Designation, Tojiboy O. Almataev, Nozimbek T. Almataev
Studies Of Tribotechnical Properties Of Composite Polymeric Materials Of Machine Designation, Tojiboy O. Almataev, Nozimbek T. Almataev
Scientific Bulletin. Physical and Mathematical Research
In the given work are experimentally investigated tribotechnical properties as intensity of wear process and factor of a friction composite epoxy the polymeric materials processed by ultrasound. Results of influence of a kind and the maintenance loading on tribotechnical properties composite epoxy polymeric materials depending on modes of ultrasonic processing are received. Correlation dependence of intensity of wear process and factor of a friction composite epoxy coverings from modes of ultrasonic processing is established. It is shown in the work that with an increase in the duration of ultrasonic exposure, the wear rate and the friction coefficient of the coatings …
Structure And Electro Physical Properties Of Solid Solution (Si2)1-X(Cds)X (0 £ X £ 0.01), Xurshidjon M. Madaminov
Structure And Electro Physical Properties Of Solid Solution (Si2)1-X(Cds)X (0 £ X £ 0.01), Xurshidjon M. Madaminov
Scientific Bulletin. Physical and Mathematical Research
This paper shows the possibility of obtaining a single-crystal solid solution for the substitution of p-Si-n-(Si2)1-x (CdS)x (0 £ x £ 0.01) on silicon substrates with a diameter of 20 mm and thickness » 400, with a crystallographic orientation (111) n-types of conductivity with a specific resistance of 1 Ω cm, by the method of liquid phase epitaxy from Sn – Si – CdS solution – melt in a hydrogen atmosphere purified by palladium. Perfect epitaxial layers with mirror surfaces and with the best parameters are grown under the following technological conditions: temperatures start crystallization –1150 ОС, speed of forced …
Application Of Optoelectron Converters Of Reflective Type For Automation Of Liquid And Gas Version Test Measuring Units, Yuriy G. Shipulin, Otabek T. Almataev
Application Of Optoelectron Converters Of Reflective Type For Automation Of Liquid And Gas Version Test Measuring Units, Yuriy G. Shipulin, Otabek T. Almataev
Scientific Bulletin. Physical and Mathematical Research
This work is devoted to the use of reflective optoelectronic converters for the automation of liquid and gas calibration flowmeter installations. Liquid and gas calibration flowmeter devices are widely used for verification and certification of various liquid and gas flowmeters and meters. The analysis of the principles of construction of a reflective optoelectronic converter for calibration devices is carried out and the basic principles of their construction are determined. A functional diagram of an experimental automated programmable calibration test setup of flow meters, liquid meters developed on the basis of ROC is presented. High accuracy requirements are imposed on the …
Investigation Of Trajectrory And Angular Distributions Scattered Ar Ions From The Defect Inp(001) Surface, U.O. Kutliyev
Investigation Of Trajectrory And Angular Distributions Scattered Ar Ions From The Defect Inp(001) Surface, U.O. Kutliyev
Scientific Journal of Samarkand University
The Ar + ions scattering from the defect InP(001)<110>, <ī10>surfaces at the grazing incidence have been simulated by the computer simulation method. The trajectory and angular distributions of scattered argon ions on above mentioned surface semichannels have been calculated.
Change Of Parameters Of Arsenidgallium Diode Structures With A Barrierschottki After Laser Radiation, K Ismailov
Change Of Parameters Of Arsenidgallium Diode Structures With A Barrierschottki After Laser Radiation, K Ismailov
Karakalpak Scientific Journal
In this article, the effect of low intensities of laser radiation at a radiation density less than critical on the electrical characteristics of arsenide gallium diode structures with a Schottky barrier Cr-n-n+-GaAs is investigated. The possibility of controlling their parameters at relatively low laser radiation intensities is shown.
Change Of Parameters Of Arsenidgallium Diode Structures With A Barrierschottki After Laser Radiation, K Ismailov
Change Of Parameters Of Arsenidgallium Diode Structures With A Barrierschottki After Laser Radiation, K Ismailov
Karakalpak Scientific Journal
In this article, the effect of low intensities of laser radiation at a radiation density less than critical on the electrical characteristics of arsenide gallium diode structures with a Schottky barrier Cr-n-n+-GaAs is investigated. The possibility of controlling their parameters at relatively low laser radiation intensities is shown.
Prospects For The Development Of Wind Power In The Republic Of Karakalpakstan, K M. Reymov
Prospects For The Development Of Wind Power In The Republic Of Karakalpakstan, K M. Reymov
Karakalpak Scientific Journal
The paper presents the results of research in order to make effective the use of wind power in the Republic of Karakalpakstan in the North-Western region of Uzbekistan. The wind potential at different elevations was determined and analyzed. The results of the researches are given in tables and charts.
Functional Possibilities Of Silicon With Clusters Of Impurity Atoms, B Abdurahmanov
Functional Possibilities Of Silicon With Clusters Of Impurity Atoms, B Abdurahmanov
Karakalpak Scientific Journal
Nowadays, itis o f great interest to avail such m aterials to create more efficient solar cells, as well as highly sensitive sensors of physical quantities of the magnetic field, deformation, IR radiation, temperature and humidity.
Parameter Of Elastic Anisotropy In Bismuth Silicate Crystals, F.R. Akhmedjanov, U.A. Saidvaliev, U.U. Tukxtaev, J.T. Nazarov
Parameter Of Elastic Anisotropy In Bismuth Silicate Crystals, F.R. Akhmedjanov, U.A. Saidvaliev, U.U. Tukxtaev, J.T. Nazarov
Scientific Journal of Samarkand University
The elastic anisotropy parameter of noncentrosymmetric cubic crystals of bismuth silicate has been investigated. It is shown that they belong to crystals with the negative anisotropy of elastic moduli of the second order. Comparison of the experimental results with the values of the velocities of acoustic waves calculated through the introduced anisotropy parameter shows a good agreement.