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Full-Text Articles in Physics
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Graduate Theses, Dissertations, and Problem Reports
Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Faculty Publications
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Novel Two-Dimensional Devices For Future Applications, Pratik Agnihotri
Legacy Theses & Dissertations (2009 - 2024)
The scalability of field effect transistor has led to the monumental success of complementary metal-oxide-semiconductor (CMOS) technology. In the past, device scaling was not the major issue to a greater extent. Recently with current technology nodes, transistor characteristics show signs of reduced performance due to short channel effects and other issues related to device scaling. Device designers look for innovative ways to enhance the transistor performance while keeping up with device miniaturization. Successful inventions include the development of tri-gate technology, gate all around (GAA) field effect transistors, silicon-on-insulator substrate, and high-k dielectrics. These developments have enabled the device scaling that …