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Full-Text Articles in Physics
Inductive Metal Identification, Paul Maggi
Inductive Metal Identification, Paul Maggi
Electrical Engineering
This project focuses on creating a device to differentiate between various types of metals via magnetic induction. Magnetic induction is used because it is both non-optical and non-contact. It achieves this by generating a varying magnetic field, which induces eddy currents in the metal. These eddy currents produce small disturbances in the surrounding magnetic field, which can be sensed with Hall Effect Sensors (HES). The primary challenge in this project was generating a sufficiently strong magnetic field to detectable disturbances. In order to achieve better results, a stronger magnetic field must be used as well as more sensitive Hall Effect …
Day/Night Band Imager For A Cubesat, Eric Stanton
Day/Night Band Imager For A Cubesat, Eric Stanton
Electrical Engineering
Day/Night Band (DNB) earth sensing and meteorological systems like the Defense Meteorological Satellite Program (DMSP) Operational Linescan System (OLS) provide visible wavelength imagery 24 hours a day that is used primarily for cloud imaging in support of weather forecasting. This paper describes a compact push-broom imager that meets low light imaging requirements for DMSP OLS and the NOAA/NASA Joint Polar Satellite System (JPSS) as documented in the Integrated Operational Requirements Document [1] (IORD) including the imager design, system level concepts of operation for data collection, radiometric and spatial calibration, and data transmission to Earth. This small, lightweight imager complies with …
Optical Mode Pattern Study Of Gan Based Leds With And Without Nanoscale Top Grating, Gregory Chavoor
Optical Mode Pattern Study Of Gan Based Leds With And Without Nanoscale Top Grating, Gregory Chavoor
Electrical Engineering
This study analyzes optical confinement factor and light emitting mode order for three different GaN LEDs: a conventional LED, thin Film LED, and thin Film LED with a photonic crystal (PhC) grating. For the first structure, we increase the thickness of AlxGa1-xN from 0 to 600nm, alter the x composition in AlxGa1-xN from 0.05 to 0.2 in steps of 0.05, and adjust the p-GaN and n-GaN thicknesses each from 0 to 200nm. For the second structure, we alter the n-GaN substrate thickness from 300-1000nm in steps of 100nm and 1000-4000nm in steps …