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Full-Text Articles in Physical Sciences and Mathematics
Long-Time Electron Spin Storage Via Dynamical Suppression Of Hyperfine-Induced Decoherence In A Quantum Dot, Wenxian Zhang, N. P. Konstantinidis, V. V. Dobrovitski, B. N. Harmon, Lea F. Santos, Lorenza Viola
Long-Time Electron Spin Storage Via Dynamical Suppression Of Hyperfine-Induced Decoherence In A Quantum Dot, Wenxian Zhang, N. P. Konstantinidis, V. V. Dobrovitski, B. N. Harmon, Lea F. Santos, Lorenza Viola
Dartmouth Scholarship
The coherence time of an electron spin decohered by the nuclear spin environment in a quantum dot can be substantially increased by subjecting the electron to suitable dynamical decoupling sequences. We analyze the performance of high-level decoupling protocols by using a combination of analytical and exact numerical methods, and by paying special attention to the regimes of large interpulse delays and long-time dynamics, which are outside the reach of standard average Hamiltonian theory descriptions. We demonstrate that dynamical decoupling can remain efficient far beyond its formal domain of applicability, and find that a protocol exploiting concatenated design provides best performance …
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Nonthermal Laser-Induced Formation Of Crystalline Ge Quantum Dots On Si(100), M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si (100) - (2×1) grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ∼120 °C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ∼260 °C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions. …
The Energy Spectrum Of Two-Electron Semiconductor Quantum Dots, Mohammad K. Elsaid
The Energy Spectrum Of Two-Electron Semiconductor Quantum Dots, Mohammad K. Elsaid
Turkish Journal of Physics
The ground-state properties of a two-dimensional quantum-dot are studied. We have used the shifted 1/N expansion method to solve the relative part Hamiltonian of two electrons confined in a quantum in the presence of an applied uniform magnetic field. The spin singlet-triplet transition in the ground state of the QD is shown. We have also displayed the singlet-triplet energy gap, J = \Delta = E_T - E_S, against the strength of the magnetic field for two electron quantum dot. Based on comparisons, the eigenenergies obtained by the shifted method are in excellent agreement with exact, variational, Hartree-Fock (HF) and Full-Configuration …