Physical Sciences and Mathematics Commons^™

Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski

Nancy A. Burnham

Auger electron spectroscopy line‐shape analysis of the Si‐L 2 3 V V peak has been performed on hydrogenated amorphous silicon (a‐Si:H). Both a‐Si:H produced by hydrogen implantation of siliconsingle crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 101 6–102 2 cm− 3 were evaluated. Correlations between the area under the deconvoluted L 2 3 V V transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using …